Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films

Journal of Luminescence

Volumn 132, Issue 5, 2012, Pages 1089-1094

  Nagar, S ^a   Gupta, S K ^b   Chakrabarti, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

Atomic Force Microscopy; Hall measurements; Photoluminescence; Pulsed Laser Deposition; X ray Diffraction; Zinc Oxide

Indexed keywords

ACCEPTOR CONCENTRATIONS; DEEP-LEVEL DEFECTS; DONOR-BOUND EXCITON; HALL MEASUREMENTS; IRRADIATED SAMPLES; LOW ENERGIES; LOW TEMPERATURE PHOTOLUMINESCENCE; N-TYPE CONDUCTIVITY; OPTICAL CHARACTERISTICS; PULSED-LASER DEPOSITION TECHNIQUE; ROOT MEAN SQUARE ROUGHNESS; ZNO FILMS; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; DEFECTS; METALLIC FILMS; PHOSPHORUS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; X RAY DIFFRACTION; ZINC OXIDE;

IRRADIATION;

EID: 84862817651     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2011.12.058     Document Type: Article

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