740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Journal of Crystal Growth

Volumn 343, Issue 1, 2012, Pages 13-16

  Ohkawa, Kazuhiro ^a   Watanabe, Tomomasa ^a   Sakamoto, Masanori ^a   Hirako, Akira ^a   Deura, Momoko ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting IIIV materials; B3. Light emitting diodes

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; CURRENT INJECTIONS; GAS TEMPERATURE; INGAN-BASED LED; LIGHT EMITTING DIODE (LED); METAL-ORGANIC VAPOR PHASE EPITAXY; PEAK WAVELENGTH; SEMI CONDUCTING III-V MATERIALS; SUSCEPTORS;

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INDIUM; NITRIDES; VAPORS;

LIGHT EMITTING DIODES;

EID: 84862808752     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.075     Document Type: Article

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