Elucidation of factors obstructing quality improvement of MOVPE-grown InN

Journal of Crystal Growth

Volumn 311, Issue 22, 2009, Pages 4636-4640

  Yamamoto, Akio ^a   Sugita, Ken ichi ^a   Hashimoto, Akihiro ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. CHARACTERIZATION; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; DECOMPOSITION RATE; ELECTRICAL/OPTICAL PROPERTIES; GROWTH TIME; HIGH GROWTH RATE; HIGH TEMPERATURE; MOVPE; N VACANCY; NITROGEN SOURCES; POROUS LAYERS; QUALITY IMPROVEMENT; STOICHIOMETRIC CRYSTALS; SUBSTRATE INTERFACE; SYSTEMATIC STUDY; THERMAL DECOMPOSITIONS;

DETERIORATION; ELECTRIC PROPERTIES; GROWTH TEMPERATURE; HYDROGEN; IONIZATION OF GASES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PYROLYSIS; REACTION KINETICS; SEMICONDUCTING ALUMINUM COMPOUNDS; VAPORS;

SEMICONDUCTOR GROWTH;

EID: 70350100328     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.08.027     Document Type: Article

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