Control of emission wavelength of GaInN single quantum well, light emitting diodes grown by metalorganic chemical vapor deposition in a split-flow reactor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4197-4202

  Yamashita, Youji ^a   Tamura, Hitoshi ^a   Horio, Naochika ^a   Sato, Hitoshi ^a   Taniguchi, Kazuyoshi ^a   Chinone, Takako ^a   Omori, Shinya ^a   Funaoka, Chihiro ^a  

^a STANLEY ELECTRIC CO LTD   (Japan)

Author keywords

AlGaN; GaInN; GaN; LED; MOCVD; Quantum well

Indexed keywords

ELECTROLUMINESCENCE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

ALUMINUM GALLIUM NITRIDE; GALLIUM INDIUM NITRIDE; SPLIT FLOW REACTOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0141829734     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4197     Document Type: Article

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