SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 258, Issue 10, 2012, Pages 4588-4591

Effects of ZnO buffer layer on GZO RRAM devices

(6) Zhao, Jian Wei a Sun, Jian a Huang, Hai Qin a Liu, Feng Juan a Hu, Zuo Fu a Zhang, Xi Qing a

a BEIJING JIAOTONG UNIVERSITY (China)

Author keywords

GZO; ReRAM devices

Indexed keywords

BUFFER LAYERS; ELECTROFORMING; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; ZINC OXIDE;

DATA RETENTION; HIGH-RESISTANCE STATE; INITIAL STATE; LOW-RESISTANCE STATE; OPERATION VOLTAGE; RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTIVE SWITCHING DEVICES; ZNO BUFFER LAYER;

RRAM;

EID: 84862799756 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2012.01.034 Document Type: Article

Times cited : (31)

References (25)

1
- 41149099157
- G.I. Meijer Science 319 2008 1625 1626
- (2008) Science , vol.319 , pp. 1625-1626
- Meijer, G.I.¹

2
- 35348846979
- J.F. Scott, and C.A.P. de Argujo Science 246 1989 1400 1405
- (1989) Science , vol.246 , pp. 1400-1405
- Scott, J.F.¹ De Argujo, C.A.P.²

3
- 33750860386
- M.N. Baibich, J.M. Broto, A. Fert, F.N.V. Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas Phys. Rev. Lett. 61 1988 2472 2475
- (1988) Phys. Rev. Lett. , vol.61 , pp. 2472-2475
- Baibich, M.N.¹ Broto, J.M.² Fert, A.³ Dau, F.N.V.⁴ Petroff, F.⁵ Eitenne, P.⁶ Creuzet, G.⁷ Friederich, A.⁸ Chazelas, J.⁹

4
- 76749089021
- R.E. Simpson, M. Krbal, P. Fons, A.V. Kolobov, J. Tominaga, T. Uruga, and H. Tanida Nano lett. 10 2010 414 419
- (2010) Nano Lett. , vol.10 , pp. 414-419
- Simpson, R.E.¹ Krbal, M.² Fons, P.³ Kolobov, A.V.⁴ Tominaga, J.⁵ Uruga, T.⁶ Tanida, H.⁷

5
- 43549126477
- A. Sawa Mater. Today 11 2008 28 36
- (2008) Mater. Today , vol.11 , pp. 28-36
- Sawa, A.¹

6
- 67650102619
- R. Waser, R. Dittmann, G. Staikov, and K. Szot Adv. Mater. 21 2009 2632 2663
- (2009) Adv. Mater. , vol.21 , pp. 2632-2663
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

7
- 25144462707
- Ü. Özgür, Ya.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doan, V. Avrutin, S.-J. Cho, and H. Morkod J. Appl. Phys. 98 2005 041301
- (2005) J. Appl. Phys. , vol.98 , pp. 041301
- Özgür, Ü.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Doan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morkod, H.⁹

8
- 38349103053
- W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, and F. Chen Appl. Phys. Lett. 92 2008 022110
- (2008) Appl. Phys. Lett. , vol.92 , pp. 022110
- Chang, W.-Y.¹ Lai, Y.-C.² Wu, T.-B.³ Wang, S.-F.⁴ Chen, F.⁵

9
- 73649141715
- S. Lee, H. Kim, D.-J. Yun, S.-W. Rhee, and K. Yong Appl. Phys. Lett. 95 2009 262113
- (2009) Appl. Phys. Lett. , vol.95 , pp. 262113
- Lee, S.¹ Kim, H.² Yun, D.-J.³ Rhee, S.-W.⁴ Yong, K.⁵

10
- 34548656097
- M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, and B.P. Andreasson Adv. Mater. 19 2007 2232 2235
- (2007) Adv. Mater. , vol.19 , pp. 2232-2235
- Janousch, M.¹ Meijer, G.I.² Staub, U.³ Delley, B.⁴ Karg, S.F.⁵ Andreasson, B.P.⁶

11
- 70450245086
- Q. Liu, S. Long, and W. Wang IEEE Electron Device Lett. 30 2009 1335 1337
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1335-1337
- Liu, Q.¹ Long, S.² Wang, W.³

12
- 79957585236
- K. Zheng, X.W. Sun, J.L. Zhao, Y. Wang, H.Y. Yu, H.V. Demir, and K.L. Teo IEEE Electron Device Lett. 32 2011 797 799
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 797-799
- Zheng, K.¹ Sun, X.W.² Zhao, J.L.³ Wang, Y.⁴ Yu, H.Y.⁵ Demir, H.V.⁶ Teo, K.L.⁷

13
- 79952281112
- K. Kinoshita, T. Okutani, H. Tanaka, T. Hinoki, H. Agura, K. Yazawa, K. Ohmi, and S. Kishida Solid State Electron. 58 2011 48 53
- (2011) Solid State Electron. , vol.58 , pp. 48-53
- Kinoshita, K.¹ Okutani, T.² Tanaka, H.³ Hinoki, T.⁴ Agura, H.⁵ Yazawa, K.⁶ Ohmi, K.⁷ Kishida, S.⁸

14
- 65249125383
- Y.C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng Nano Lett. 9 2009 1636 1643
- (2009) Nano Lett. , vol.9 , pp. 1636-1643
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

15
- 84862797859
- J. Zhao, F. Liu, J. Sun, H. Huang, Z. Hu, and X. Zhang Chin. Opt. Lett. 10 1 2012 013102
- (2012) Chin. Opt. Lett. , vol.10 , Issue.1 , pp. 013102
- Zhao, J.¹ Liu, F.² Sun, J.³ Huang, H.⁴ Hu, Z.⁵ Zhang, X.⁶

16
- 73849145282
- Y.C. Yang, F. Pan, F. Zeng, and M. Liu J. Appl. Phys. 106 2009 123705
- (2009) J. Appl. Phys. , vol.106 , pp. 123705
- Yang, Y.C.¹ Pan, F.² Zeng, F.³ Liu, M.⁴

17
- 2942548117
- M.J. Rozenberg, I.H. Inoue, and M.J. Sa nchez Phys. Rev. Lett. 92 2004 178302
- (2004) Phys. Rev. Lett. , vol.92 , pp. 178302
- Rozenberg, M.J.¹ Inoue, I.H.² Sa Nchez, M.J.³

18
- 33745386456
- D.S. Shang, Q. Wang, L.D. Chen, R. Dong, X.M. Li, and W.Q. Zhang Phys. Rev. B 73 2006 245427
- (2006) Phys. Rev. B , vol.73 , pp. 245427
- Shang, D.S.¹ Wang, Q.² Chen, L.D.³ Dong, R.⁴ Li, X.M.⁵ Zhang, W.Q.⁶

19
- 0030737730
- A. Asamitsu, Y. Tomioka, H. Kuwahara, and Y. Tokura Nature 388 1997 50 52
- (1997) Nature , vol.388 , pp. 50-52
- Asamitsu, A.¹ Tomioka, Y.² Kuwahara, H.³ Tokura, Y.⁴

20
- 23944447615
- B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke J. Appl. Phys. 98 2005 033715
- (2005) J. Appl. Phys. , vol.98 , pp. 033715
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

21
- 0016963564
- Y. Hirose, and H. Hirose J. Appl. Phys. 47 1976 2767 2772
- (1976) J. Appl. Phys. , vol.47 , pp. 2767-2772
- Hirose, Y.¹ Hirose, H.²

22
- 63649159091
- S. Zhang, S.B. Long, W.H. Guan, Q. Liu, Q. Wang, and M. Liu J. Phys. D: Appl. Phys. 42 2009 055112
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 055112
- Zhang, S.¹ Long, S.B.² Guan, W.H.³ Liu, Q.⁴ Wang, Q.⁵ Liu, M.⁶

23
- 37549046069
- C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, and T.-Y. Tseng J. Appl. Phys. 102 2007 094101
- (2007) J. Appl. Phys. , vol.102 , pp. 094101
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Tseng, T.-Y.⁴

24
- 58849156576
- X. Chen, G. Wu, P. Jiang, W. Liu, and D. Bao Appl. Phys. Lett. 94 2009 033501
- (2009) Appl. Phys. Lett. , vol.94 , pp. 033501
- Chen, X.¹ Wu, G.² Jiang, P.³ Liu, W.⁴ Bao, D.⁵

25
- 78049340534
- Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, and M. Liu ACS Nano 4 2010 6162 6168
- (2010) ACS Nano , vol.4 , pp. 6162-6168
- Liu, Q.¹ Long, S.² Lv, H.³ Wang, W.⁴ Niu, J.⁵ Huo, Z.⁶ Chen, J.⁷ Liu, M.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.