An indium-free transparent resistive switching random access memory

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 797-799

  Zheng, K ^a   Sun, X W ^a,b   Zhao, J L ^b   Wang, Y ^a   Yu, H Y ^a   Demir, H V ^a,c   Teo, K L ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b TIANJIN UNIVERSITY   (China)

^c BILKENT UNIVERSITY   (Turkey)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

GZO; indium free; transparent resistive switching; ZnO

Indexed keywords

CYCLING CHARACTERISTICS; GZO; INDIUM FREE; MEMORY DEVICE; METALORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MECHANISMS; RETENTION TIME; ROOM TEMPERATURE; VISIBLE REGION; ZNO;

GALLIUM; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SWITCHING; SWITCHING SYSTEMS; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 79957585236     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2126017     Document Type: Article

References (7)

1. L. Wang, M. H. Yoon, G. Lu, Y. Yu, A. Facchetti, and T. J. Marks, "High performance transparent inorganic-organic hybrid thin-film n-type transistors," Nat. Mater., vol. 5, no. 11, pp. 893-900, Nov. 2006. (Pubitemid 44658575)
2. M. C. Chen, T. C. Chang, and S. Y. Huang, "Bipolar resistive switching characteristics of transparent Indium Gallium Zinc Oxide resistive random access memory," Electrochem. Solid-State Lett., vol. 13, no. 6, pp. H191-H193, 2010.
3. J. W. Seo, J. W. Park, K. S. Lim, J. H. Yang, and S. J. Kang, "Transparent resistive random access memory and its characteristic for nonvolatile resistive switching," Appl. Phys. Lett., vol. 93, no. 22, p. 223 505, Dec. 2008.
4. J. L. Zhao, X. W. Sun, and S. T. Tan, "Bandgap-engineered Ga-rich GaZnO thin films for UV transparent electronics," IEEE Trans. Electron Devices, vol. 56, no. 12, pp. 2995-2999, Dec. 2009.
5. Y. C. Yang, F. Pan, and Q. Liu, "Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application," Nano Lett., vol. 9, no. 4, pp. 1636-1643, Apr. 2009.
6. B. Gao, B. Sun, and H. W. Zhang, "Unified physical model of bipolar oxide-based resistive switching memory," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1326-1328, Dec. 2009.
7. W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, "Unipolar resistive switching characteristic of ZnO thin films for nonvolatile memory application," Appl. Phys. Lett., vol. 92, no. 2, p. 022110, Jan. 2008.