Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Chinese Optics Letters

Volumn 10, Issue 1, 2012, Pages

  Zhao, Jianwei ^a   Liu, Fengjuan ^a   Sun, Jian ^a   Huang, Haiqin ^a   Hu, Zuofu ^a   Zhang, Xiqing ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FORMING PROCESS; HIGH-RESISTANCE STATE; HIGH-VOLTAGES; INITIAL STATE; LOW-POWER CONSUMPTION; LOW-RESISTANCE STATE; MEMORY PROPERTIES; MULTI-STEP; OPERATION VOLTAGE; RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RETENTION MEASUREMENT; ROOM TEMPERATURE;

MAGNETRON SPUTTERING; SWITCHING SYSTEMS; ZINC OXIDE;

EQUIPMENT;

EID: 84862797859     PISSN: 16717694     EISSN: None     Source Type: Journal    
DOI: 10.3788/COL201210.013102     Document Type: Article

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