Effect of annealing atmosphere on structural, optical and electrical properties of Al-doped Zn 1-xCd xO thin films

Journal of Sol-Gel Science and Technology

Volumn 62, Issue 3, 2012, Pages 344-350

  Duan, L B ^a   Zhao, X R ^a   Liu, J M ^a   Geng, W C ^a   Sun, H N ^a   Xie, H Y ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

(Cd,Al) codoped ZnO films; Band gap modification; Crystallinity; Oxygen vacancies; Transparent conducting

Indexed keywords

ANNEALING ATMOSPHERES; BAND-GAP MODIFICATION; C-AXIS ORIENTATIONS; CO-DOPED ZNO; CO-DOPING; CRITICAL CONCENTRATION; CRYSTALLINITIES; ELECTRICAL MEASUREMENT; GLASS SUBSTRATES; HEXAGONAL WURTZITE STRUCTURE; IN-VACUUM; NITROGEN ANNEALING; OPTICAL AND ELECTRICAL PROPERTIES; POST ANNEALING; TRANSMISSION SPECTRUMS; TRANSPARENT CONDUCTING; TRANSPARENT CONDUCTING OXIDE; VACUUM-ANNEALING; ZNO;

ALUMINUM; ANNEALING; ENERGY GAP; METALLIC FILMS; NITROGEN; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SUBSTRATES; THIN FILMS; VACUUM; ZINC; ZINC OXIDE; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84862779233     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-012-2731-9     Document Type: Article

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