Optical and electrical properties of bandgap engineered gallium-doped Mgx Zn1 - x O films

Solid State Communications

Volumn 149, Issue 39-40, 2009, Pages 1670-1673

  Wei, Wei ^a   Jin, Chunming ^b   Narayan, Jagdish ^a   Narayan, Roger J ^b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

A. Type of materials thin films; B. Preparation and processing laser processing; D. Phenomena and properties optical properties

Indexed keywords

A. TYPE OF MATERIALS THIN FILMS; ATOMIC PERCENT; B. PREPARATION AND PROCESSING LASER PROCESSING; BAND GAPS; BLUE LIGHT EMITTING DIODES; BLUE LIGHT LASERS; C-PLANE SAPPHIRE SUBSTRATES; D. PHENOMENA AND PROPERTIES OPTICAL PROPERTIES; EPITAXIALLY GROWN; FILM TRANSPARENCY; MAGNESIUM CONCENTRATIONS; OPTICAL AND ELECTRICAL PROPERTIES; OTHER OPTO-ELECTRONIC DEVICES; ULTRAVIOLET WAVELENGTH; VISIBLE SPECTRA;

ATOMS; CORUNDUM; ELECTRIC PROPERTIES; GALLIUM; LASERS; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; MAGNESIUM; PULSED LASER DEPOSITION; THIN FILMS; TRANSPARENCY; ZINC; ZINC OXIDE;

FILM PREPARATION;

EID: 68949181889     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.06.021     Document Type: Article

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