Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Applied Physics Letters

Volumn 96, Issue 11, 2010, Pages

  Lee, Sangwon ^a   Park, Jun Hyun ^a   Jeon, Kichan ^a   Kim, Sungchul ^a   Jeon, Yongwoo ^a   Kim, Dae Hwan ^a   Kim, Dong Myong ^a   Park, Jae Chul ^b   Kim, Chang Jung ^b  

^a Kookmin University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BULK PROPERTIES; DRAIN CONTACTS; ELECTRICAL CHARACTERISTIC; KEY ELEMENTS; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL STRUCTURES; MSM STRUCTURES; PARASITIC RESISTANCES; PHYSICS-BASED; REVERSE BIAS; SCHOTTKY; SCHOTTKY BARRIERS; SEMIEMPIRICAL MODELS; SOURCE-DRAIN CONTACTS; THERMIONIC EMISSION CURRENT; THERMIONIC FIELD EMISSION; VOLTAGE DROP;

AMORPHOUS FILMS; DRAIN CURRENT; ELECTRIC PROPERTIES; FIELD EMISSION; METALS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; THIN FILM TRANSISTORS; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77949719015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3364134     Document Type: Article

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