Field-effect mobility of amorphous silicon thin-film transistors under strain

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 732-735

  Gleskova, H ^a   Hsu, P I ^a   Xi, Z ^a,b   Sturm, J C ^a   Suo, Z ^a,c   Wagner, S ^a  

^a Princeton University   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; FUNCTIONS; STRAIN; THIN FILM TRANSISTORS;

CHANNEL MATERIAL; COMPRESSIVE STRAIN; MECHANICAL STRAIN; SPHERICAL DOMES;

AMORPHOUS SILICON;

EID: 2942556919     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.079     Document Type: Conference Paper

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