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Volumn 3, Issue 2, 2009, Pages 16-23

Smart grid technologies

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT HANDLING; FREQUENCY CAPABILITY; HIGH-VOLTAGE; LARGE POWER; PHYSICAL LIMITS; POWER DEVICES; POWER ELECTRONIC SYSTEMS; POWER HANDLING; SILICON-BASED TECHNOLOGY; SMART GRID; VOLTAGE CAPABILITY;

EID: 67650122813     PISSN: 19324529     EISSN: None     Source Type: Journal    
DOI: 10.1109/MIE.2009.932583     Document Type: Article
Times cited : (203)

References (18)
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    • Comparison of the state-of-the-art high power IGBTs, GCTs and ETOs
    • K. Motto, Y. Li, and A. Q. Huang, "Comparison of the state-of-the-art high power IGBTs, GCTs and ETOs," in Proc. IEEE Applied Power Electronics Conf., 2000, vol. 2. pp. 1129-1136.
    • (2000) Proc. IEEE Applied Power Electronics Conf , vol.2 , pp. 1129-1136
    • Motto, K.1    Li, Y.2    Huang, A.Q.3
  • 2
    • 48349091993 scopus 로고    scopus 로고
    • Design and analysis of a 270 kW five-level DC/DC converter for solid-state transformer using 10 kV SiC power devices
    • June 17-21
    • L. Yang, T. Zhao, J. Wang, and A. Q. Huang, "Design and analysis of a 270 kW five-level DC/DC converter for solid-state transformer using 10 kV SiC power devices," in Proc. IEEE Power Electronics Specialists Conf. (PESC'07), June 17-21, 2007, pp. 245-251.
    • (2007) Proc. IEEE Power Electronics Specialists Conf. (PESC'07) , pp. 245-251
    • Yang, L.1    Zhao, T.2    Wang, J.3    Huang, A.Q.4
  • 5
    • 0035276515 scopus 로고    scopus 로고
    • 3100 V, Asymmetrical gate turn-off (GTO) thyristors in 4H-SiC
    • Mar
    • S. H. Ryu, A. Agarwal, R. Singh, and J. W. Palmour, "3100 V, Asymmetrical gate turn-off (GTO) thyristors in 4H-SiC," IEEE Electron Device Lett., vol. 22, no. 3, pp. 127-129, Mar. 2001.
    • (2001) IEEE Electron Device Lett , vol.22 , Issue.3 , pp. 127-129
    • Ryu, S.H.1    Agarwal, A.2    Singh, R.3    Palmour, J.W.4
  • 10
    • 67650200730 scopus 로고    scopus 로고
    • Energy Internet - Future renewable electric energy delivery and management (FREEDM) systems
    • 4th Quarter
    • A. Q. Huang, G. Heydt, S. Dale, J. Zheng, and M. Crow, "Energy Internet - Future renewable electric energy delivery and management (FREEDM) systems," IEEE Power Electronics Society Newsletter, 4th Quarter, vol. 20, no. 4, pp. 8-9, 2008.
    • (2008) IEEE Power Electronics Society Newsletter , vol.20 , Issue.4 , pp. 8-9
    • Huang, A.Q.1    Heydt, G.2    Dale, S.3    Zheng, J.4    Crow, M.5
  • 13
    • 46249103496 scopus 로고    scopus 로고
    • Development of a commercially viable 4H-SiC PiN diode technology
    • Oct
    • M. K. Das, "Development of a commercially viable 4H-SiC PiN diode technology," in Proc. Baltic Electronics Conf. 2006 Int., Oct. 2006, pp. 1-4.
    • (2006) Proc. Baltic Electronics Conf. 2006 Int , pp. 1-4
    • Das, M.K.1
  • 15
    • 67650211758 scopus 로고    scopus 로고
    • A. P. Silard, Gate Turn Off (GTO) Thyristors. Bucharest: Teluiicg, 1990.
    • A. P. Silard, Gate Turn Off (GTO) Thyristors. Bucharest: Teluiicg, 1990.
  • 16
    • 0002622512 scopus 로고    scopus 로고
    • Ionization rates and critical fields in 4H silicon carbide
    • July
    • A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, "Ionization rates and critical fields in 4H silicon carbide," Appl. Phys. Lett. vol. 71, no. 1, pp. 90-92, July 1997.
    • (1997) Appl. Phys. Lett , vol.71 , Issue.1 , pp. 90-92
    • Konstantinov, A.O.1    Wahab, Q.2    Nordell, N.3    Lindefelt, U.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.