Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in solid-state transformer application

2010 IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Proceedings

Volumn , Issue , 2010, Pages 100-104

  Wang, Gangyao ^a   Huang, Xing ^a   Wang, Jun ^a   Zhao, Tiefu ^a   Bhattacharya, Subhashish ^a   Huang, Alex Q ^a  

^a North Carolina State University   (United States)

Author keywords

IGBT; SiC MOSFET; Solid state transformer

Indexed keywords

DIFFERENT FREQUENCY; FREQUENCY CAPABILITY; HIGH VOLTAGE; IGBT; LOW CURRENTS; SIC MOSFET; STATE-TRANSFORMERS; SWITCHING LOSS; TEST RESULTS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC TRANSFORMER TESTING; ENERGY CONVERSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; SILICON CARBIDE; SOLID STATE DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650117900     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2010.5618069     Document Type: Conference Paper

References (5)

1. S. Bhattacharya, T. Zhao, G. Wang, S. Dutta, S. Baek, Y. Du, B. Parkhideh, X. Zhou, A.Q. Huang, "Design and Development of Generation-I Silicon based Solid State Transformer", Applied Power Electronics Conference and Exposition, APEC 2010, palm Springs, CA, February 21-25, 2010, pp. 1666-1673.
2. Kopta, A., M. Rahimo, U. Schlabach, D. Schneider, E. Carroll, and S. Linder, "A 6.5 kV IGBT module with very high safe operating area", IEEE IAS-05, vol. 2, pp. 794-798, 2005. (Pubitemid 44042539)
3. J. Wang, T. Zhao, A.Q. Huang, R. Callanan, F. Husna, A. Agarwal, "Characterization, Modeling and Application of 10 kV SiC MOSFET, " IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008.
4. B. Jayant Baliga, Fundamentals of Semiconductor Devices, New York: Springer, 2008, p. 100.
5. Jun Wang, "Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices, " Ph.D. dissertation, Dept. Elec. and Comp. Eng., North Carolina State Univ., Raleigh, 2010.