Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering

Thin Solid Films

Volumn 520, Issue 18, 2012, Pages 5997-6000

  Cho, Seong Gook ^a   Lee, Dong Uk ^a   Pak, Sang Woo ^a   Nahm, Tschang Uh ^a   Kim, Eun Kyu ^a  

^a Hanyang University   (South Korea)

Author keywords

Electronic transport; Heterojunction; Thin films; Zinc oxide

Indexed keywords

BARRIER HEIGHTS; CRYSTALLINITIES; DOPANT SEGREGATION; ELECTRONIC TRANSPORT; HETEROJUNCTION DIODES; P-TYPE SI; POST ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING METHOD; RAPID CHANGES; REVERSE CURRENTS; ROOM TEMPERATURE; SI ATOMS; SI SUBSTRATES; ZNO; ZNO FILMS;

ANNEALING; DIFFUSION BARRIERS; DOPING (ADDITIVES); HETEROJUNCTIONS; METALLIC FILMS; SEMICONDUCTOR DIODES; SILICON OXIDES; THIN FILMS; ZINC; ZINC OXIDE;

SILICON;

EID: 84862218624     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.026     Document Type: Article

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