On the interplay between electrical conductivity and Seebeck coefficient in ultra-narrow silicon nanowires

Journal of Electronic Materials

Volumn 41, Issue 6, 2012, Pages 1305-1311

  Neophytou, Neophytos ^a   Kosina, Hans ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

atomistic; Boltzmann transport; electrical conductivity; nanowire; Seebeck coefficient; silicon; sp 3d 5s; Thermoelectric; tight binding

Indexed keywords

ATOMISTIC; BOLTZMANN TRANSPORT; ELECTRICAL CONDUCTIVITY; SP 3D 5S; THERMOELECTRIC; TIGHT BINDING;

ELECTRIC POWER FACTOR; ELECTRONIC STRUCTURE; NANOWIRES; SEEBECK COEFFICIENT; SILICON; STATISTICAL MECHANICS;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 84862218326     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1891-7     Document Type: Article

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