Holey silicon as an efficient thermoelectric material

Nano Letters

Volumn 10, Issue 10, 2010, Pages 4279-4283

  Tang, Jinyao ^a,c   Wang, Hung Ta ^a   Lee, Dong Hyun ^d   Fardy, Melissa ^a   Huo, Ziyang ^a   Russell, Thomas P ^d   Yang, Peidong ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

nanostructure; necking; Silicon; thermal conductivity; thermoelectric

Indexed keywords

BEST VALUE; DEVICE APPLICATION; HIGH DENSITY; NECKING; ORDERS OF MAGNITUDE; ROOM TEMPERATURE; SILICON NANOWIRES; THERMOELECTRIC; THERMOELECTRIC MATERIAL; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES; THIN SILICON MEMBRANE;

NANOWIRES; THERMAL CONDUCTIVITY; THERMOANALYSIS; THERMOELECTRIC EQUIPMENT;

HYDRAULIC STRUCTURES;

EID: 77958033784     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102931z     Document Type: Article

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