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Volumn 40, Issue 5, 2011, Pages 753-758

Thermoelectric properties of scaled silicon nanowires using the sp 3d 5 s*-SO atomistic tight-binding model and boltzmann transport

(2) Neophytou, Neophytos a Kosina, Hans a

a INSTITUTE FOR MICROELECTRONICS (Austria)

Author keywords

atomistic; Boltzmann transport; conductivity; Landauer; nanowire; Seebeck coefficient; silicon; sp 3 d 5 s; Thermoelectric; tight binding; ZT

Indexed keywords

ATOMISTIC; BOLTZMANN TRANSPORT; CONDUCTIVITY; LANDAUER; SEEBECK; SP 3 D 5 S; THERMOELECTRIC; TIGHT BINDING; ZT;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRIC WIRE; ELECTRONIC STRUCTURE; NANOWIRES; PHONONS; SCATTERING; STATISTICAL MECHANICS; SURFACE ROUGHNESS; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 79955879967 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1542-z Document Type: Conference Paper

Times cited : (5)

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