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Journal of Luminescence

Volumn 114, Issue 2, 2005, Pages 137-144

Quenching of Si nanocrystal photoluminescence by doping with gold or phosphorous

(5) Tchebotareva, Anna L a De Dood, Michiel J A a Biteen, Julie S b Atwater, Harry A b Polman, Albert a,b

a FOM INSTITUTE AMOLF (Netherlands)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Photoluminescence; Quenching

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; PASSIVATION; PHOSPHORS; PHOTOLUMINESCENCE; QUENCHING; SILICON COMPOUNDS; SINGLE CRYSTALS; STATISTICAL METHODS;

LUMINESCENCE LIFETIME; NEAR-INFRARED WAVELENGTHS; SI NANOCRYSTALS; STATISTICAL MODEL;

NANOSTRUCTURED MATERIALS;

EID: 21844439539 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2004.12.014 Document Type: Article

Times cited : (53)

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