Phosphorus ion implantation in silicon nanocrystals embedded in SiO2

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Murakami, Kouichi ^a   Shirakawa, Ryota ^a   Tsujimura, Masatoshi ^a   Uchida, Noriyuki ^b   Fukata, Naoki ^c   Hishita, Shun Ichi ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSED AIR MOTORS; DANGLING BONDS; DEFECTS; HYDROGEN; HYDROGEN BONDS; ION BOMBARDMENT; ION IMPLANTATION; LEAD; NANOCRYSTALS; PHOSPHORUS; SILICON OXIDES; SPIN DYNAMICS;

BEFORE AND AFTER; CRITICAL CONCENTRATIONS; DOSE DEPENDENCES; ELECTRON SPIN RESONANCES; ELECTRON-HOLE PAIRS; HIGH TEMPERATURES; HYDROGEN ATOMS; INTERFACE DEFECTS; LOW CONCENTRATIONS; NON-RADIATIVE RECOMBINATIONS; P DONORS; PB CENTERS; PL INTENSITIES; SI NANOCRYSTALS; SILICON NANOCRYSTALS;

CONCENTRATION (PROCESS);

EID: 62549095920     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3088871     Document Type: Article

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