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Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

Origin of the electrical instabilities in GaN/AlGaN double-barrier structure

(6) Sakr, S a Warde, E a Tchernycheva, M a Rigutti, L a Isac, N a Julien, F H a

a UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT HYSTERESIS; CURRENT-VOLTAGE MEASUREMENTS; DOUBLE-BARRIER STRUCTURES; ELECTRICAL CHARACTERISTIC; ELECTRICAL INSTABILITY; LOW TEMPERATURES; NEGATIVE DIFFERENTIAL RESISTANCES; ROOM TEMPERATURE; TRAP CHARGING;

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; NEGATIVE RESISTANCE; RESONANT TUNNELING; RESONANT TUNNELING DIODES; SEMICONDUCTOR DIODES;

POWER QUALITY;

EID: 80053991086 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645011 Document Type: Article

Times cited : (37)

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