Effects of lateral current injection in GaN multi-quantum well light-emitting diodes

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Kivisaari, Pyry ^a   Oksanen, Jani ^a   Tulkki, Jukka ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; CURRENT TRANSPORT; HOLE CURRENT; LATERAL CURRENT INJECTIONS; LED STRUCTURE; MULTIQUANTUM WELLS; NONUNIFORM;

GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84862138077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4720584     Document Type: Conference Paper

References (29)

1. J. Piprek, Efficiency droop in nitride-based light-emitting diodes., Phys. Status Solidi A, 207, 2217-2225 (2010). 10.1002/pssa.201026149
2. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes., Appl. Phys. Lett. 92, 053502 (2008). 10.1063/1.2839305
3. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morko, Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells., Appl. Phys. Lett. 93, 171113 (2008). 10.1063/1.3012388
4. S.-C. Ling, T.-C. Lu, S.-P. Chang, J.-R. Chen, H.-C. Kuo, and S.-C. Wang, Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes., Appl. Phys. Lett. 96, 231101 (2010). 10.1063/1.3449557
5. Y.-K. Kuo, M.-C. Tsai, and S.-H. Yen, Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer., Opt. Commun. 282, 4252-4255 (2009). 10.1016/j.optcom.2009. 07.036
6. C.-T. Liao, M.-C. Tsai, B.-T. Liou, S.-H. Yen, and Y.-K. Kuo, Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well., J. Appl. Phys. 108, 063107 (2010). 10.1063/1.3471804
7. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Origin of efficiency droop in GaN-based light-emitting diodes., Appl. Phys. Lett. 91, 183507 (2007). 10.1063/1.2800290
8. J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. Park, Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes., Appl. Phys. Lett. 94, 011113 (2009). 10.1063/1.3058687
9. J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions., IEEE Photon. Technol. Lett. 20, 449-451 (2008). 10.1109/LPT.2008.916966
10. J.-W. Shi, S.-H. Guol, C.-S. Lin, J.-K. Sheu, K.-H. Chang, W.-C. Lai, C.-H. Kuo, C.-J. Tun, and J.-I. Chyi, The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers., IEEE J. Sel. Top. Quantum Electron. 15, 1292-1297 (2009). 10.1109/JSTQE.2009. 2017029
11. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, High performance thin-film flip-chip InGaN-GaN light-emitting diodes., Appl. Phys. Lett. 89, 071109 (2006). 10.1063/1.2337007
12. C. de Falco, E. Gatti, A. L. Lacaita, and R. Sacco, Quantum-corrected drift-diffusion models for transport in semiconductor devices., J. Comput. Phys. 204, 533-561 (2005). 10.1016/j.jcp.2004.10.029
13. S. L. Chuang, Physics of Photonic Devices (Wiley, 2009).
14. O. Heikkilä, J. Oksanen, and J. Tulkki, The challenge of unity wall plug efficiency: The effects of internal heating on the efficiency of light emitting diodes., J. Appl. Phys. 107, 033105 (2010). 10.1063/1.3285431
15. F. Bernardini and V. Fiorentini, Spontaneous polarization and piezoelectric constants of III-V nitrides., Phys. Rev. B 56, R10024-R10027 (1997). 10.1103/PhysRevB.56.R10024
16. V. Fiorentini, F. Bernardini, and O. Ambacher, Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures., Appl. Phys. Lett. 80, 1204-1206 (2002). 10.1063/1.1448668
17. A. Zoroddu, F. Bernardini, P. Ruggerone, and V. Fiorentini, First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory., Phys. Rev. B 64, 045208 (2001). 10.1103/PhysRevB.64.045208
18. J. Piprek and Z.-M. Li, Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes., in NUSOD 2010 Sept. 6-9, Atlanta, GA, USA.
19. Y.-K. Kuo, S.-H. Horng, S.-H. Yen, M.-C. Tsai, and M.-F. Huang, Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes., Appl. Phys. A: Mater. Sci. Process. 98, 509-515 (2010). 10.1007/s00339-009-5485-7
20. J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes., Appl. Phys. B: Lasers Opt. 98, 779-789 (2010). 10.1007/s00340-009-3856-6
21. 1-xN/GaN heterojunction interfaces., Appl. Phys. Lett. 84, 4644-4646 (2004). 10.1063/1.1759388
22. W. S. Yan, R. Zhang, Z. L. Xie, X. Q. Xiu, P. Han, H. Lu, P. Chen, S. L. Gu, Y. Shi, Y. D. Zheng, and Z. G. Liu, A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN., Appl. Phys. Lett. 94, 042106 (2009). 10.1063/1.3072597
23. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials (Wiley, 2001).
24. S. Y. Karpov, Visible light-emitting diodes. in Nitride Semiconductor Devices, edited by, J. Piprek, (Wiley-VCH, 2007), pp. 303-325.
25. E. Bellotti and F. Bertazzi, Transport parameters for electrons and holes. in Nitride Semiconductor Devices, edited by, J. Piprek, (Wiley-VCH, 2007), pp. 69-93.
26. 1-xN/GaN quantum wells reestimated., Thin Solid Films 515, 4488-4491 (2006). 10.1016/j.tsf.2006.07.139
27. S.-H. Han, D.-Y. Lee, S.-J. Lee, C.-Y. Cho, M.-K. Kwon, S. P. Lee, D. Y. Noh, D.-J. Kim, Y. C. Kim, and S.-J. Park, Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes., Appl. Phys. Lett. 94, 231123 (2009). 10.1063/1.3153508
28. V. Fiorentini, F. Bernardini, F. D. Sala, A. Di Carlo, and P. Lugli, Effects of macroscopic polarization in III-V nitride multiple quantum wells., Phys. Rev. B 60, 8849-8858 (1999). 10.1103/PhysRevB.60.8849
29. K. A. Bulashevich, V. F. Mymrin, S. Yu. Karpov, I. A. Zhmakin, and A. I. Zhmakin, Simulation of visible and ultra-violet group-III nitride light emitting diodes., J. Comput. Phys. 213, 214-238 (2006). 10.1016/j.jcp.2005.08.011