|
Volumn , Issue , 2010, Pages 89-90
|
Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DEVICE SIMULATIONS;
ELECTRON LEAKAGE;
GAN-BASED LIGHT-EMITTING DIODES;
INJECTION CURRENTS;
INTERNAL QUANTUM EFFICIENCY;
NITRIDE BASED LIGHT EMITTING DIODES;
COMPUTER SIMULATION;
ELECTRONS;
ELECTROOPTICAL DEVICES;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
ORGANIC LIGHT EMITTING DIODES (OLED);
OPTOELECTRONIC DEVICES;
|
EID: 78449269839
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/NUSOD.2010.5595651 Document Type: Conference Paper |
Times cited : (5)
|
References (20)
|