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Volumn , Issue , 2010, Pages 89-90

Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIMULATIONS; ELECTRON LEAKAGE; GAN-BASED LIGHT-EMITTING DIODES; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; NITRIDE BASED LIGHT EMITTING DIODES;

EID: 78449269839     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUSOD.2010.5595651     Document Type: Conference Paper
Times cited : (5)

References (20)
  • 4
  • 7
    • 63449085542 scopus 로고    scopus 로고
    • A. Knauer et al., Proc. SPIE, Vol. 7231, 72310G (2009)
    • (2009) Proc. SPIE , vol.7231
    • Knauer, A.1
  • 9
    • 3543060607 scopus 로고    scopus 로고
    • Burnaby, Canada
    • Crosslight Software, Burnaby, Canada (http://www.crosslight.com).
    • Crosslight Software
  • 14
    • 3042684828 scopus 로고    scopus 로고
    • H. Zhang et al., vol. 84, pp. 4644-4646, 2004
    • H. Zhang et al., vol. 84, pp. 4644-4646, 2004.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.