|
Volumn 203, Issue 12, 2006, Pages 3136-3141
|
N-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation
|
Author keywords
[No Author keywords available]
|
Indexed keywords
N-TYPE DIAMONDS;
PHOSPHINE GAS;
TBP PRECURSOR;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC COMPOUNDS;
PHOSPHORUS;
SEMICONDUCTOR DOPING;
DIAMOND LIKE CARBON FILMS;
|
EID: 33749325362
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200671113 Document Type: Conference Paper |
Times cited : (44)
|
References (14)
|