N-type diamond growth by phosphorus doping

Materials Research Society Symposium Proceedings

Volumn 1039, Issue , 2008, Pages 39-48

  Kato, Hiromitsu ^a   Makino, Toshiharu ^a   Yamasaki, Satoshi ^a   Okushi, Hideyo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; LIGHT EMISSION; LIGHT EMITTING DIODES; NONMETALS; PHOSPHORUS; PHYSICAL OPTICS; ULTRAVIOLET RADIATION;

CARRIER COMPENSATIONS; ELECTRICAL PROPERTIES; N-TYPE DIAMONDS; P-I-N JUNCTIONS; PHOSPHORUS DOPING; PHOSPHORUS-DOPED DIAMONDS; ROOM TEMPERATURES; ULTRAVIOLET LIGHT EMITTING DIODES; UV LIGHTS;

DIAMOND FILMS;

EID: 54249121164     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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