High-efficiency excitonic emission with deep-ultraviolet light from (001)-oriented diamond p-i-n junction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 37-41, 2006, Pages

  Makino, Toshiharu ^a   Tokuda, Norio ^a   Kato, Hiromitsu ^a   Ogura, Masahiko ^a   Watanabe, Hideyuki ^a   Ri, Sung Gi ^a   Yamasaki, Satoshi ^a,b   Okushi, Hideyo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Chemical vapor deposition; Diamond; Exciton; Light emitting diode; p i n junction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; EXCITONS; LIGHT EMITTING DIODES; ULTRAVIOLET RADIATION;

HOMOEPITAXIAL GROWTH; P-I-N JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 34047261447     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1042     Document Type: Article

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