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Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 12, 2006, Pages 3128-3135

Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces

(8) Suzuki, Mariko a Koizumi, Satoshi b Katagiri, Masayuki c Ono, Tomio a Sakuma, Naoshi a Yoshida, Hiroaki a Sakai, Tadashi a Uchikoga, Shuichi a

a TOSHIBA CORPORATION (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-FREQUENCY; METAL WORK FUNCTION; METAL/DIAMOND INTERFACES; RECTIFICATION PROPERTIES;

CONCENTRATION (PROCESS); EPITAXIAL GROWTH; FREQUENCY MODULATION; INTERFACES (MATERIALS); IONIZATION; PHOSPHORUS;

SCHOTTKY BARRIER DIODES;

EID: 33749360555 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200671124 Document Type: Conference Paper

Times cited : (54)

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