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Volumn 3, Issue 4, 2010, Pages

Electron emission from a diamond (111) p-i-n+ junction diode with negative electron affinity during room temperature operation

(10) Takeuchi, Daisuke a Makino, Toshiharu a Kato, Hiromitsu a Ogura, Masahiko a Tokuda, Norio b Oyama, Kazuhiro a,c Matsumoto, Tsubasa a,c Hirabayashi, Izumi a Okushi, Hideyo a Yamasaki, Satoshi a,c

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b KANAZAWA UNIVERSITY (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS VOLTAGE; BUILT-IN POTENTIAL; EMISSION CURRENT; HEAVILY DOPED; HIGH CURRENTS; HYDROGENATED DIAMOND; JUNCTION DIODE; NEGATIVE ELECTRON AFFINITY; P-I-N JUNCTIONS; P-N JUNCTION; ROOM-TEMPERATURE OPERATION;

DIODES; ELECTRON AFFINITY; ELECTRONS; SEMICONDUCTOR JUNCTIONS;

ELECTRON EMISSION;

EID: 77950651911 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.041301 Document Type: Article

Times cited : (21)

References (11)

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