Carrier compensation in (001) n-type diamond by phosphorus doping

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 796-799

  Kato, Hiromitsu ^a,b   Yamasaki, Satoshi ^a,b,c   Okushi, Hideyo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

(001) oriented diamond; Carrier compensation; Chemical vapor deposition; Compensator; n type conductivity; Phosphorus doping

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; PHASE COMPOSITION; PHOSPHORUS COMPOUNDS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING;

CARRIER COMPENSATION; N-TYPE CONDUCTIVITY; ORIENTED DIAMOND; PHOSPHORUS DOPING;

CARRIER CONCENTRATION;

EID: 34047249935     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.11.085     Document Type: Article

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