P-doped diamond grown on (110)-textured microcrystalline diamond: Growth, characterization and devices

Journal of Physics Condensed Matter

Volumn 21, Issue 36, 2009, Pages

  Haenen, Ken ^a,b   Lazea, Andrada ^a,b   Barjon, Julien ^c   D'Haen, Jan ^a,b   Habka, Nada ^c,d   Teraji, Tokuyuki ^e   Koizumi, Satoshi ^e   Mortet, Vincent ^a,b  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

^d CEA SACLAY   (France)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONDUCTIVE FILMS; DIAMOND FILMS; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

ELECTRON BACK-SCATTERED DIFFRACTION; GRAIN ORIENTATION; HALL MEASUREMENTS; MICROCRYSTALLINE DIAMOND; MICROSCOPY TECHNIQUE; RECTIFICATION RATIO; THERMAL ACTIVATION ENERGIES; THREE ORDERS OF MAGNITUDE;

PHOSPHORUS;

EID: 70349591637     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/36/364204     Document Type: Article

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