Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6365-6367

  Katagiri, Masayuki ^a,b   Isoya, Junichi ^a   Koizumi, Satoshi ^b   Kanda, Hisao ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND-BASED DEVICES; HOMOEPITAXIAL DIAMOND FILMS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; WIDE-BAND-GAP SEMICONDUCTORS;

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIODES; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

DIAMOND FILMS;

EID: 13444274610     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840119     Document Type: Article

References (11)

1. S. Koizumi, M. Kamo, Y. Sato, H. Ozaki, and T. Inuzuka, Appl. Phys. Lett. 71, 1065 (1997).
2. S. Koizumi, T. Teraji, and H. Kanda, Diamond Relat. Mater. 9, 935 (2000).
3. H. Sternschulte, K. Thonke, R. Sauer, and S. Koizumi, Phys. Rev. B 59, 12924 (1999).
4. M. Nesládek, K. Meykens, K. Haenen, G. Knuyt, L. M. Stals, T. Teraji, and S. Koizumi, Phys. Rev. B 59, 14852 (1999).
5. E. Gheeraert, S. Koizumi, T. Teraji, and H. Kanda, Solid State Commun. 113, 577 (2000).
6. S. Koizumi, K. Watanabe, M. Hasegawa, and H. Kanda, Science 292, 1899 (2001).
7. J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, D. J. Twitchen, A. J. Whitehead, S. E. Coe, and G. A. Scarsbrook, Science 297, 1670 (2002).
8. S. Yamanaka, H. Watanabe, S. Masai, D. Takeuchi, H. Okushi, and K. Kajimura, Jpn. J. Appl. Phys., Part 2 37, L1129 (1998).
9. T. Teraji, M. Katagiri, S. Koizumi, T. Ito, and H. Kanda, Jpn. J. Appl. Phys., Part 2 42, L882 (2003).
10. J. Bardeen and W. Schokley, Phys. Rev. 80, 72 (1950).
11. F. Nava, C. Canali, C. Jacoboni, L. Reggiani, and S. F. Kozlov, Solid State Commun. 33, 475 (1980).