Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 983-986

  Ghetti, A ^a   Benvenuti, A ^a   Molteni, G ^a   Alberici, S ^a   Soncini, V ^a   Pavan, A ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CONCENTRATION (PROCESS); DIFFUSION; ELECTRODES; GATES (TRANSISTOR); OXIDATION; QUANTUM THEORY; SILICA;

OXIDATION ENHANCED DIFFUSION (OED); OXIDATION VELOCITY; SPIKE ANNEALING; TRANSIENT ENHANCED DIFFUSION (TED);

BORON;

ACTIVE AREA; BORON DIFFUSIONS; BORON SEGREGATION; CHANNEL PROFILE; GATE OXIDATION; INTERFACE DIFFUSION; LATERAL SEGREGATION; OXIDATION ANNEALING; SIMULATION STUDIES; SPIKE ANNEALING;

EID: 21644463435     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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