Dopant dose loss at the Si-SiO2 interface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 428-434

  Vuong, H H ^a   Rafferty, C S ^a   Eshraghi, S A ^a   Ning, J ^b   McMacken, J R ^b   Chaudhry, S ^b   McKinley, J ^b   Stevie, F A ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; DISSIMILAR MATERIALS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA;

DOPANT DOSE LOSS PHENOMENON; TRANSIENT ENHANCED DIFFUSION (TED);

MOSFET DEVICES;

EID: 0033715176     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591206     Document Type: Article

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