Ultra-thin SOI CMOS using laser spike anneal

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2006, Pages 84-85

  Ren, Zhibin ^a   Sleight, J ^a   Heraenrother, J M ^b   Sinah, D V ^b   Gluschenkov, O ^a   Dokumaci, O ^a   Black, L ^c   Pan, J ^c   Lee, K L ^b   Ott, J ^b   Ronsheim, P ^a   Lee, J ^a   Haensch, W ^b   Ieong, M ^a   Sung, C Y ^a  

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c AMD   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ACTIVATION; NFET DRIVE CURRENTS; UTSOI DEVICES;

ANNEALING; BORON; DOPING (ADDITIVES); LASER APPLICATIONS; LEAKAGE CURRENTS; SHEET RESISTANCE; SILICON ON INSULATOR TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 34250315794     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2006.251077     Document Type: Conference Paper

References (3)

1. H.-S. P Wong, et al., IEDM, p.407, 1997.
2. D. V. Singh et al., IEEE Intl. SOI conference, p.178, 2005.
3. M. Na et al., IEDM, p.121, 2002.