SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 4, Issue 7, 2012, Pages 2296-2300

Enhancing charge-storage capacity of non-volatile memory devices using template-directed assembly of gold nanoparticles

(5) Gupta, Raju Kumar a Krishnamoorthy, S b Kusuma, Damar Yoga c Lee, Pooi See c Srinivasan, M P a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMPHIPHILIC DIBLOCK COPOLYMERS; BIASING VOLTAGES; C-V HYSTERESIS; CHARGE STORAGE; ELECTROSTATIC SELF ASSEMBLY; FUNCTIONALIZED; GOLD NANOPARTICLES; GOLD-NANOPARTICLE ARRAYS; MEMORY EFFECTS; MEMORY WINDOW; METAL-INSULATOR-SEMICONDUCTOR DEVICES; MIS STRUCTURE; NANO PATTERN; NONVOLATILE MEMORY DEVICES; NUMBER DENSITY; POSITIVELY CHARGED; REVERSE MICELLES; TEMPLATE-DIRECTED ASSEMBLY;

AGGREGATES; BLOCK COPOLYMERS; ELECTROSTATIC DEVICES; METAL NANOPARTICLES;

MIS DEVICES;

GOLD; NANOPARTICLE; POLYMER; QUANTUM DOT;

ARTICLE; ARTIFICIAL INTELLIGENCE; BIOLOGICAL MODEL; CHEMISTRY; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; METHODOLOGY; MICROARRAY ANALYSIS; MICROTECHNOLOGY; NANOTECHNOLOGY; PRODUCTIVITY; STATIC ELECTRICITY; SURFACE PROPERTY; SYNTHESIS;

ARTIFICIAL INTELLIGENCE; EFFICIENCY; EQUIPMENT DESIGN; GOLD; MICROARRAY ANALYSIS; MICROTECHNOLOGY; MODELS, BIOLOGICAL; NANOPARTICLES; NANOTECHNOLOGY; POLYMERS; QUANTUM DOTS; STATIC ELECTRICITY; SURFACE PROPERTIES;

EID: 84861908579 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr12134d Document Type: Article

Times cited : (37)

References (48)

1
- 3142773890
- R. Bez E. Camerlenghi A. Modelli A. Visconti Proc. IEEE 2003 91 489 501
- (2003) Proc. IEEE , vol.91 , pp. 489-501
- Bez, R.¹ Camerlenghi, E.² Modelli, A.³ Visconti, A.⁴

2
- 34249001433
- K. Kim S. Y. Lee Microelectron. Eng. 2007 84 1976 1981
- (2007) Microelectron. Eng. , vol.84 , pp. 1976-1981
- Kim, K.¹ Lee, S.Y.²

3
- 0029516376
- S. Tiwari F. Rana K. Chan H. Hanafi W. Chan D. Buchanan Tech. Dig.-Int. Electron Devices Meet. 1995 1995 521
- (1995) Tech. Dig. - Int. Electron Devices Meet. , vol.1995 , pp. 521
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Chan, W.⁵ Buchanan, D.⁶

4
- 33846567589
- W. L. Leong P. S. Lee S. G. Mhaisalkar T. P. Chen A. Dodabalapur Appl. Phys. Lett. 2007 90 042906 042903
- (2007) Appl. Phys. Lett. , vol.90 , pp. 042906-042903
- Leong, W.L.¹ Lee, P.S.² Mhaisalkar, S.G.³ Chen, T.P.⁴ Dodabalapur, A.⁵

5
- 0036714604
- Z. Liu C. Lee V. Narayanan G. Pei E. C. Kan IEEE Trans. Electron Devices 2002 49 1606 1613
- (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1606-1613
- Liu, Z.¹ Lee, C.² Narayanan, V.³ Pei, G.⁴ Kan, E.C.⁵

6
- 40849120852
- C. Novembre D. Guerin K. Lmimouni C. Gamrat D. Vuillaume Appl. Phys. Lett. 2008 92 103314
- (2008) Appl. Phys. Lett. , vol.92 , pp. 103314
- Novembre, C.¹ Guerin, D.² Lmimouni, K.³ Gamrat, C.⁴ Vuillaume, D.⁵

7
- 56749158944
- K. J. Baeg Y. Y. Noh J. Ghim B. Lim D. Y. Kim Adv. Funct. Mater. 2008 18 3678 3685
- (2008) Adv. Funct. Mater. , vol.18 , pp. 3678-3685
- Baeg, K.J.¹ Noh, Y.Y.² Ghim, J.³ Lim, B.⁴ Kim, D.Y.⁵

8
- 66249125983
- Y. Guo C. A. Di S. Ye X. Sun J. Zheng Y. Wen W. Wu G. Yu Y. Liu Adv. Mater. 2009 21 1954 1959
- (2009) Adv. Mater. , vol.21 , pp. 1954-1959
- Guo, Y.¹ Di, C.A.² Ye, S.³ Sun, X.⁴ Zheng, J.⁵ Wen, Y.⁶ Wu, W.⁷ Yu, G.⁸ Liu, Y.⁹

9
- 11044226139
- T. B. Singh N. Marjanović G. J. Matt N. S. Sariciftci R. Schwödiauer S. Bauer Appl. Phys. Lett. 2004 85 5409 5411
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5409-5411
- Singh, T.B.¹ Marjanović, N.² Matt, G.J.³ Sariciftci, N.S.⁴ Schwödiauer, R.⁵ Bauer, S.⁶

10
- 70349792474
- W. L. Leong N. Mathews S. Mhaisalkar Y. M. Lam T. Chen P. S. Lee J. Mater. Chem. 2009 19 7354 7361
- (2009) J. Mater. Chem. , vol.19 , pp. 7354-7361
- Leong, W.L.¹ Mathews, N.² Mhaisalkar, S.³ Lam, Y.M.⁴ Chen, T.⁵ Lee, P.S.⁶

11
- 70450003299
- J. Jang C. Choi J.-S. Lee K.-S. Min J. Lee D. M. Kim D. H. Kim Semicond. Sci. Technol. 2009 24 115009
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 115009
- Jang, J.¹ Choi, C.² Lee, J.-S.³ Min, K.-S.⁴ Lee, J.⁵ Kim, D.M.⁶ Kim, D.H.⁷

12
- 1642587321
- S. Lombardo B. De Salvo C. Gerardi T. Baron Microelectron. Eng. 2004 72 388 394
- (2004) Microelectron. Eng. , vol.72 , pp. 388-394
- Lombardo, S.¹ De Salvo, B.² Gerardi, C.³ Baron, T.⁴

13
- 27844447017
- D. Tsoukalas P. Dimitrakis S. Kolliopoulou P. Normand Mater. Sci. Eng., B 2005 124-125 93 101
- (2005) Mater. Sci. Eng., B , vol.124-125 , pp. 93-101
- Tsoukalas, D.¹ Dimitrakis, P.² Kolliopoulou, S.³ Normand, P.⁴

14
- 17944366377
- S. Choi S. S. Kim M. Chang H. Hwang S. Jeon C. Kim Appl. Phys. Lett. 2005 86 123110
- (2005) Appl. Phys. Lett. , vol.86 , pp. 123110
- Choi, S.¹ Kim, S.S.² Chang, M.³ Hwang, H.⁴ Jeon, S.⁵ Kim, C.⁶

15
- 20944446360
- S. Duguay J. J. Grob A. Slaoui Y. Le Gall M. Amann-Liess J. Appl. Phys. 2005 97 104330
- (2005) J. Appl. Phys. , vol.97 , pp. 104330
- Duguay, S.¹ Grob, J.J.² Slaoui, A.³ Le Gall, Y.⁴ Amann-Liess, M.⁵

16
- 19744383710
- W. L. Liu P. F. Lee J. Y. Dai J. Wang H. L. W. Chan C. L. Choy Z. T. Song S. L. Feng Appl. Phys. Lett. 2005 86 13110
- (2005) Appl. Phys. Lett. , vol.86 , pp. 13110
- Liu, W.L.¹ Lee, P.F.² Dai, J.Y.³ Wang, J.⁴ Chan, H.L.W.⁵ Choy, C.L.⁶ Song, Z.T.⁷ Feng, S.L.⁸

17
- 37049074842
- M. Brust M. Walker D. Bethell D. J. Schiffrin R. Whyman J. Chem. Soc., Chem. Commun. 1994 7 801 802
- (1994) J. Chem. Soc., Chem. Commun. , Issue.7 , pp. 801-802
- Brust, M.¹ Walker, M.² Bethell, D.³ Schiffrin, D.J.⁴ Whyman, R.⁵

18
- 0742321804
- M. C. Daniel D. Astruc Chem. Rev. 2004 104 293 346
- (2004) Chem. Rev. , vol.104 , pp. 293-346
- Daniel, M.C.¹ Astruc, D.²

19
- 0034813038
- Y. W. Jun S. M. Lee N. J. Kang J. Cheon J. Am. Chem. Soc. 2001 123 5150 5151
- (2001) J. Am. Chem. Soc. , vol.123 , pp. 5150-5151
- Jun, Y.W.¹ Lee, S.M.² Kang, N.J.³ Cheon, J.⁴

20
- 33746096072
- J. Turkevich P. C. Stevenson J. Hillier Discuss. Faraday Soc. 1951 11 55 75
- (1951) Discuss. Faraday Soc. , vol.11 , pp. 55-75
- Turkevich, J.¹ Stevenson, P.C.² Hillier, J.³

21
- 30644467873
- F. Wang G. Xu Z. Zhang X. Xin Eur. J. Inorg. Chem. 2006 109 114
- (2006) Eur. J. Inorg. Chem. , pp. 109-114
- Wang, F.¹ Xu, G.² Zhang, Z.³ Xin, X.⁴

22
- 58949102645
- H. Choi B. S. Choi T. W. Kim S. J. Jung M. Chang T. Lee H. Hwang Nanotechnology 2008 19
- (2008) Nanotechnology , pp. 19
- Choi, H.¹ Choi, B.S.² Kim, T.W.³ Jung, S.J.⁴ Chang, M.⁵ Lee, T.⁶ Hwang, H.⁷

23
- 49049118429
- M. F. Mabrook C. Pearson D. Kolb D. A. Zeze M. C. Petty Org. Electron. 2008 9 816 820
- (2008) Org. Electron. , vol.9 , pp. 816-820
- Mabrook, M.F.¹ Pearson, C.² Kolb, D.³ Zeze, D.A.⁴ Petty, M.C.⁵

24
- 0034454561
- T. Ishii T. Osabe T. Mine F. Murai K. Yano Tech. Dig.-Int. Electron Devices Meet. 2000 2000 305
- (2000) Tech. Dig. - Int. Electron Devices Meet. , vol.2000 , pp. 305
- Ishii, T.¹ Osabe, T.² Mine, T.³ Murai, F.⁴ Yano, K.⁵

25
- 33745284580
- B. Park K. Cho H. Kim S. Kim Semicond. Sci. Technol. 2006 21 975 978
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 975-978
- Park, B.¹ Cho, K.² Kim, H.³ Kim, S.⁴

26
- 43049133276
- Q. Wang R. Jia W. Guan W. Li Q. Liu Y. Hu S. Long B. Chen M. Liu T. Ye W. Lu L. Jiang J. Phys. D: Appl. Phys. 2008 41 035109
- (2008) J. Phys. D: Appl. Phys. , vol.41 , pp. 035109
- Wang, Q.¹ Jia, R.² Guan, W.³ Li, W.⁴ Liu, Q.⁵ Hu, Y.⁶ Long, S.⁷ Chen, B.⁸ Liu, M.⁹ Ye, T.¹⁰ Lu, W.¹¹ Jiang, L.¹²

27
- 0141856374
- S. Paul C. Pearson A. Molloy M. A. Cousins M. Green S. Kolliopoulou P. Dimitrakis P. Normand D. Tsoukalas M. C. Petty Nano Lett. 2003 3 533 536
- (2003) Nano Lett. , vol.3 , pp. 533-536
- Paul, S.¹ Pearson, C.² Molloy, A.³ Cousins, M.A.⁴ Green, M.⁵ Kolliopoulou, S.⁶ Dimitrakis, P.⁷ Normand, P.⁸ Tsoukalas, D.⁹ Petty, M.C.¹⁰

28
- 21244506483
- M. Aizawa J. M. Buriak J. Am. Chem. Soc. 2005 127 8932 8933
- (2005) J. Am. Chem. Soc. , vol.127 , pp. 8932-8933
- Aizawa, M.¹ Buriak, J.M.²

29
- 0037161425
- Y. Boontongkong R. E. Cohen Macromolecules 2002 35 3647 3652
- (2002) Macromolecules , vol.35 , pp. 3647-3652
- Boontongkong, Y.¹ Cohen, R.E.²

30
- 75649090433
- H. C. Kim S. M. Park W. D. Hinsberg I. R. Division Chem. Rev. 2010 110 146 177
- (2010) Chem. Rev. , vol.110 , pp. 146-177
- Kim, H.C.¹ Park, S.M.² Hinsberg, W.D.³ Division, I.R.⁴

31
- 33746327154
- S. Krishnamoorthy R. Pugin J. Brugger H. Heinzelmann C. Hinderling Adv. Funct. Mater. 2006 16 1469 1475
- (2006) Adv. Funct. Mater. , vol.16 , pp. 1469-1475
- Krishnamoorthy, S.¹ Pugin, R.² Brugger, J.³ Heinzelmann, H.⁴ Hinderling, C.⁵

32
- 33749849660
- J. Y. Cheng C. A. Ross H. I. Smith E. L. Thomas Adv. Mater. 2006 18 2505 2521
- (2006) Adv. Mater. , vol.18 , pp. 2505-2521
- Cheng, J.Y.¹ Ross, C.A.² Smith, H.I.³ Thomas, E.L.⁴

33
- 1842289819
- M. Park C. Harrison P. M. Chaikin R. A. Register D. H. Adamson Science 1997 276 1401 1404
- (1997) Science , vol.276 , pp. 1401-1404
- Park, M.¹ Harrison, C.² Chaikin, P.M.³ Register, R.A.⁴ Adamson, D.H.⁵

34
- 0038470648
- E. Schäffer T. Thurn-Albrecht T. P. Russell U. Steiner Nature 2000 403 874 877
- (2000) Nature , vol.403 , pp. 874-877
- Schäffer, E.¹ Thurn-Albrecht, T.² Russell, T.P.³ Steiner, U.⁴

35
- 0842288221
- K. Guarini C. T. Black Y. Zhang I. V. Babich E. M. Sikorski L. M. Gignac Proc. of Electron Devices Meeting, IEDM '03 Technical Digest, IEEE International 2003 541 544
- (2003) Proc. of Electron Devices Meeting, IEDM '03 Technical Digest, IEEE International , pp. 541-544
- Guarini, K.¹ Black, C.T.² Zhang, Y.³ Babich, I.V.⁴ Sikorski, E.M.⁵ Gignac, L.M.⁶

36
- 35248821263
- C. Lee J. H. Kwon J. S. Lee Y. M. Kim Y. Choi H. Shin J. Lee B. H. Sohn Appl. Phys. Lett. 2007 91 153506
- (2007) Appl. Phys. Lett. , vol.91 , pp. 153506
- Lee, C.¹ Kwon, J.H.² Lee, J.S.³ Kim, Y.M.⁴ Choi, Y.⁵ Shin, H.⁶ Lee, J.⁷ Sohn, B.H.⁸

37
- 54949148764
- W. L. Leong P. S. Lee A. Lohani Y. M. Lam T. Chen S. Zhang A. Dodabalapur S. G. Mhaisalkar Adv. Mater. 2008 20 2325 2331
- (2008) Adv. Mater. , vol.20 , pp. 2325-2331
- Leong, W.L.¹ Lee, P.S.² Lohani, A.³ Lam, Y.M.⁴ Chen, T.⁵ Zhang, S.⁶ Dodabalapur, A.⁷ Mhaisalkar, S.G.⁸

38
- 11944264183
- K. C. Grabar R. Griffith Freeman M. B. Hommer M. J. Natan Anal. Chem. 1995 67 735 743
- (1995) Anal. Chem. , vol.67 , pp. 735-743
- Grabar, K.C.¹ Griffith Freeman, R.² Hommer, M.B.³ Natan, M.J.⁴

39
- 1842425564
- F. Zhang M. P. Srinivasan Langmuir 2004 20 2309 2314
- (2004) Langmuir , vol.20 , pp. 2309-2314
- Zhang, F.¹ Srinivasan, M.P.²

40
- 0032668717
- T. Zhu X. Fu T. Mu J. Wang Z. Liu Langmuir 1999 15 5197 5199
- (1999) Langmuir , vol.15 , pp. 5197-5199
- Zhu, T.¹ Fu, X.² Mu, T.³ Wang, J.⁴ Liu, Z.⁵

41
- 0003610719
- Wiley, New York
- E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York, 1982
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

42
- 29244455661
- C. Lee U. Ganguly V. Narayanan T. H. Hou J. Kim E. C. Kan IEEE Electron Device Lett. 2005 26 879 881
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 879-881
- Lee, C.¹ Ganguly, U.² Narayanan, V.³ Hou, T.H.⁴ Kim, J.⁵ Kan, E.C.⁶

43
- 0003610719
- Wiley, New York
- E. H. Nicolean and J. R. Brews, Metal Oxide Semiconductor Physics and Technology, Wiley, New York, 1992
- (1992) Metal Oxide Semiconductor Physics and Technology
- Nicolean, E.H.¹ Brews, J.R.²

44
- 47149094833
- P. Diao M. Guo Q. Zhang J. Phys. Chem. C 2008 112 7036 7046
- (2008) J. Phys. Chem. C , vol.112 , pp. 7036-7046
- Diao, P.¹ Guo, M.² Zhang, Q.³

45
- 70349745964
- J. B. Shein L. M. H. Lai P. K. Eggers M. N. Paddon-Row J. J. Gooding Langmuir 2009 25 11121 11128
- (2009) Langmuir , vol.25 , pp. 11121-11128
- Shein, J.B.¹ Lai, L.M.H.² Eggers, P.K.³ Paddon-Row, M.N.⁴ Gooding, J.J.⁵

46
- 0038665192
- J. K. Kim H. J. Cheong Y. Kim J. Y. Yi H. J. Bark S. H. Bang J. H. Cho Appl. Phys. Lett. 2003 82 2527 2529
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2527-2529
- Kim, J.K.¹ Cheong, H.J.² Kim, Y.³ Yi, J.Y.⁴ Bark, H.J.⁵ Bang, S.H.⁶ Cho, J.H.⁷

47
- 79952146219
- P. Heremans G. H. Gelinck R. Müller K. J. Baeg D. Y. Kim Y. Y. Noh Chem. Mater. 2011 23 341 358
- (2011) Chem. Mater. , vol.23 , pp. 341-358
- Heremans, P.¹ Gelinck, G.H.² Müller, R.³ Baeg, K.J.⁴ Kim, D.Y.⁵ Noh, Y.Y.⁶

48
- 67349256765
- B. Park K. Cho Y.-S. Koo S. Kim Curr. Appl. Phys. 2009 9 1334 1337
- (2009) Curr. Appl. Phys. , vol.9 , pp. 1334-1337
- Park, B.¹ Cho, K.² Koo, Y.-S.³ Kim, S.⁴

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