Understanding surfactant/graphene interactions using a graphene field effect transistor: Relating molecular structure to hysteresis and carrier mobility

Langmuir

Volumn 28, Issue 22, 2012, Pages 8579-8586

  Shih, Chih Jen ^a   Paulus, Geraldine L C ^a   Wang, Qing Hua ^a   Jin, Zhong ^a   Blankschtein, Daniel ^a   Strano, Michael S ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; DEVICE APPLICATION; ELECTRON HOLE; ELECTRON TRANSFER; GRAPHENE TRANSISTORS; NEUTRAL SURFACTANT; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; SENSOR DEVICE; TRANSFER ELECTRONS; TRANSPORT CHARACTERISTICS; TRANSPORT THEORY;

ADSORBATES; ANIONIC SURFACTANTS; CATIONIC SURFACTANTS; CHEMICAL PROPERTIES; FIELD EFFECT TRANSISTORS; HYSTERESIS; SENSORS; STATISTICAL MECHANICS;

GRAPHENE;

EID: 84861903578     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la3008816     Document Type: Article

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