Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl 2 plasma surface treatments

Materials Chemistry and Physics

Volumn 135, Issue 1, 2012, Pages 150-157

  Chen, Tai You ^a   Chen, Huey Ing ^a   Chiu, Po Shun ^a   Huang, Chien Chang ^a   Hsu, Chi Shiang ^a   Chou, Po Cheng ^a   Liu, Rong Chau ^b   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaN; Pd; Plasma treatment; Schottky diode; Surface roughness

Indexed keywords

FAST RESPONSE; GAN; HYDROGEN MOLECULE; HYDROGEN SENSING PROPERTIES; HYDROGEN SENSOR; PLASMA SURFACE TREATMENT; PLASMA SURFACES; PLASMA TREATMENT; REVERSE VOLTAGES; REVERSE-BIAS; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SENSING RESPONSE; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PROPERTIES;

GALLIUM NITRIDE; HYDROGEN; PALLADIUM; PLASMA APPLICATIONS; PLASMAS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SENSORS; SURFACE ROUGHNESS;

SURFACE TREATMENT;

EID: 84861892354     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.04.038     Document Type: Article

References (40)

1. M. Momirlan, and T.N. Veziroglu Renew. Sustain. Energ. Rev. 6 2002 141
2. P. Kumar, and L.K. Malhotra Mater. Chem. Phys. 88 2004 106
3. S.R. Morrison Sens. Actuator B: Chem. 2 1982 329
4. Y. Liu, C. Gao, X. Pan, X. An, Y. Xie, M. Zhou, J. Song, H. Zhang, Z. Liu, Q. Zhao, Y. Zhang, and E. Xie Appl. Surf. Sci. 257 2011 2264
5. X. Du, Y. Wang, Y. Mu, L. Gui, P. Wang, and Y. Tang Chem. Mater. 14 2002 3953
6. H.L. Hsu, J.M. Jehng, Y. Sung, L.C. Wang, and S.R. Yang Mater. Chem. Phys. 109 2008 148
7. F.C. Huang, Y.Y. Chen, and T.T. W Nanotechnology 20 2009 065501(6pp.)
8. D.L. Moreno, D.M. Hernandez, S.C. Carrera, and R.E. Luna Opt. Lasers Eng. 49 2011 693
9. J.R. Huang, W.C. Hsu, H.I. Chen, and W.C. Liu Sens. Actuator B: Chem. 123 2007 1040
10. H. Okada, A. Naruse, Y. Furukawa, and A. Wakahara Jpn. J. Appl. Phys. 50 2011 01AD08(6pp.)
11. S.Y. Chiu, H.W. Huang, T.H. Huang, K.C. Liang, K.P. Liu, J.H. Tsai, and W.S. Lour Sens. Actuator B: Chem. 138 2009 422
12. P. Koteswara, and V.R. Reddy Mater. Chem. Phys. 114 2009 821
13. F.K. Yam, and Z. Hassan Appl. Surf. Sci. 253 2007 9525
14. J.J. Delaunay, N. Kakoiyama, and I. Yamada Mater. Chem. Phys. 104 2007 141
15. F.K. Yam, and Z. Hassan Mater. Lett. 63 2009 724
16. S. Xu, S. Hartvickson, and J.X. Zhao ACS Appl. Mater. Interfaces 3 2011 1865
17. M.M. Rahman, A. Jamal, S.B. Khan, and M. Faisal ACS Appl. Mater. Interfaces 3 2011 1346
18. C.J. Mogab The loading effect in plasma etching J. Electrochem. Soc. 124 1977 1262
19. B. Wu, A. Kumar, and S. Pamarthy High aspect ratio silicon etch: a review J. Appl. Phys. 108 2010 051101(20p.)
20. H.J. Pan, K.W. Lin, K.H. Yu, C.C. Cheng, K.B. Thei, W.C. Liu, and H.I. Chen Electron. Lett. 38 2002 92
21. W.C. Liu, K.W. Lin, H.I. Chen, C.K. Wang, C.C. Cheng, S.Y. Cheng, and C.T. Lu IEEE Electr. Device Lett. 23 2002 640
22. S. M. Sze, Wiley, New York, 1981, (Chapter 2).
23. N. Yildirim, K. Ejderha, and A. Turut J. Appl. Phys. 108 2010 114506(8pp.)
24. T.H. Tsai, H.I. Chen, I.P. Liu, C.W. Huang, T.P. Chen, L.Y. Chen, Y.J. Liu, and W.C. Liu IEEE Trans. Electron Dev. 55 2008 3575
25. C.W. Hung, H.C. Chang, Y.Y. Tsai, P.H. Lai, S.I. Fu, T.P. Chen, H.I. Chen, and W.C. Liu IEEE Trans. Electron Dev. 52 2007 1224
26. T.H. Tsai, H.I. Chen, K.W. Lin, C.W. Huang, C.H. Hsu, T.P. Chen, L.Y. Chen, K.Y. Chu, C.F. Chang, and W.C. Liu Appl. Phys. Express 1 2008 041102(3pp.)
27. A.C. Schmitz, A.T. Ping, M.A. Khan, Q. Chen, J.W. Yang, and I. Adesida Semicond. Sci. Technol. 11 1996 1464
28. B.S. Kang, S. Kim, F. Ren, B.P. Gila, C.R. Abernathy, and S.J. Pearton Sens. Actuator B: Chem. 104 2005 232
29. N. Tasaltin, S. Ozturk, N. Kilinc, and Z.Z. Ozturk Appl. Phys. A 97 2009 745
30. T.H. Tsai, J.R. Huang, K.W. Lin, W.C. Hsu, H.I. Chen, and W.C. Liu Sens. Actuator B: Chem. 129 2008 292
31. J.R. Welty, C.E. Wicks, R.E. Wilson, and G. Rorrer Fundamentals of Momentum, Heat, and Mass Transfer fifth ed. 2008 Wiley & Sons New York 427
32. R.C. Pawar, J.S. Shaikh, A.V. Moholkar, S.M. Pawar, J.H. Kim, J.Y. Patil, S.S. Suryavanshi, and P.S. Patil Sens. Actuator B: Chem. 151 2010 212
33. P.P. Sahay, and R.K. Nath Sens. Actuator B: Chem. 133 2008 222
34. Y.L. Wang, F. Ren, W. Lim, S.J. Pearton, K.H. Baik, S.M. Hwang, Y.G. Seo, and S. Jang Curr. Appl. Phys. 10 2010 1029
35. J.R. Huang, W.C. Hsu, Y.J. Chen, T.B. Wang, H.I. Chen, and W.C. Liu IEEE Sens. J. 11 2011 1194
36. S.Y. Chiu, H.W. Huang, T.H. Huang, K.C. Liang, K.P. Liu, J.H. Tsai, and W.S. Lour Int. J. Hydrogen Energy 34 2009 5604
37. S.N. Das, and A.K. Pal J. Phys. D: Appl. Phys. 40 2007 7291
38. O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A.L. Spetz, M. Stutzmann, and M. Eickhoff Appl. Phys. Lett. 83 2003 773
39. S.Y. Chiu, J.H. Tsai, H.W. Huang, K.C. Liang, T.H. Huang, K.P. Liu, T.M. Tsai, K.Y. Hsu, and W.S. Lour Sens. Actuator B: Chem. 141 2009 532
40. X.Q. Zeng, M.L. Latimer, Z.L. Xiao, S. Panuganti, U. Welp, W.K. Kwok, and T. Xu Nano Lett. 11 2011 262