Schottky diode based on porous GaN for hydrogen gas sensing application

Applied Surface Science

Volumn 253, Issue 24, 2007, Pages 9525-9528

  Yam, F K ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Hydrogen sensing; Porous GaN; Schottky barrier height

Indexed keywords

CHEMICAL SENSORS; HYDROGEN; MORPHOLOGY; PALLADIUM; POROUS MATERIALS; SCHOTTKY BARRIER DIODES;

HYDROGEN GAS SENSING; HYDROGEN SENSING; POROUS NETWORKS; SCHOTTKY BARRIER HEIGHT;

GALLIUM NITRIDE;

EID: 34548507284     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.05.071     Document Type: Article

References (11)

1. Fauchet P.M., Tsybeskov L., Peng C., Duttagupta S.P., Von Behren J., Kostoulas Y., Vandyshev J.M.V., and Hirschman K.D. IEEE J. Sel. Top. Quantum Electron. 1 (1995) 1126
2. Luongo K., Sine A., and Bhansali S. Sens. Actuators B 111-112 (2005) 125
3. Polishchuk V., Souteyrand E., Martin J., Stikha V., and Skryshevsky V. Anal. Chim. Acta 375 (1998) 205
4. Salehi A., Nikfarjam A., and Kalantari D.J. Sens. Actuators B 113 (2006) 419
5. William T.L., Diaz D.J., Bohn P.W., and Molnar R.J. J. Vac. Sci. Technol. B 22 (2004) 925
6. Diaz D.J., Williamson T.L., Adesida I., and Bohn P.W. J. Appl. Phys. 94 (2003) 7526
7. Rhoderick E.H., and Williams R.H. Metal Semiconductor Contacts. 2nd ed. (1988), Clarendon Press, Oxford
8. Cole M.W., Eckart D.W., Han W.Y., Pfeffer R.L., Monahan T., Ren F., Yuan C., Stall R.A., Pearton S.J., Li Y., and Lu Y. J. Appl. Phys. 80 (1996) 278
9. Huang J.-R., Hsu W.-C., Chen Y.-J., Wang T.-B., Lin K.-W., Chen H.-I., and Liu W.-C. Sens. Actuators B 117 (2006) 151
10. Roy S., Jacob C., and Basu S. Sens. Actuators B 94 (2003) 298
11. Luther B.P., Wolter S.D., and Mohney S.E. Sens. Actuators B 56 (1999) 164