Investigation of hydrogen-sensing characteristics of a Pd/GaN Schottky diode

IEEE Sensors Journal

Volumn 11, Issue 5, 2011, Pages 1194-1200

  Huang, Jun Rui ^a   Hsu, Wei Chou ^a   Chen, Yeong Jia ^a   Wang, Tzong Bin ^a   Chen, Huey Ing ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Adsorption; hydrogen adsorption heat; hydrogen detection sensitivity ratio; hydrogen sensors; transient response

Indexed keywords

ADSORPTION HEATS; APPLIED VOLTAGES; HIGH TEMPERATURE; HYDROGEN ADSORPTION; HYDROGEN ADSORPTION HEAT; HYDROGEN CONCENTRATION; HYDROGEN DETECTION; HYDROGEN DETECTION SENSITIVITY; HYDROGEN DETECTION SENSITIVITY RATIO; HYDROGEN SENSORS; HYDROGEN-SENSING; LOW HYDROGEN CONCENTRATION; OPERATING TEMPERATURE; RESPONSE CHARACTERISTIC; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SHORT RESPONSE TIME; TEMPERATURE RANGE; TRANSIENT RESPONSE; VAN'T HOFF EQUATION;

CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; POWER QUALITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SENSITIVITY ANALYSIS; SENSORS; TRANSIENT ANALYSIS;

GAS ADSORPTION;

EID: 79952841105     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2084430     Document Type: Article

References (43)

1. T. Akin, B. Ziaie, S. A. Nikles, and K. Najafi, "A modular micromachined high-density connector system for biomedical applications, " IEEE Trans. Biomed. Eng., vol. 46, no. 4, pp. 471-480, Apr. 1999. (Pubitemid 29159374)
2. A. Dittmar and K. Najafi, "Special topic section on microtechniques, microsensors, microactuators, and microsystems, " IEEE Trans. Biomed. Eng., vol. 47, no. 1, pp. 1-2, Jan. 2000. (Pubitemid 30043991)
3. 2 interface, " J. Appl. Phys., vol. 78, pp. 988-996, Jul. 1995.
4. M. Löfdahl, M. Eriksson, M. Johansson, and I. Lundström, "Difference in hydrogen sensitivity between Pt and Pd field-effect devices, " J. Appl. Phys., vol. 91, pp. 4275-4280, Apr./2002.
5. D. Briand, H. Sundgren, B. van der Schoot, I. Lundström, and N. F. de Rooij, "Thermally isolated MOSFET for gas sensing application, " IEEE Electron Device Lett., vol. 22, no. 1, pp. 11-13, Jan. 2002. (Pubitemid 32133412)
6. A. E. Åbom, R. T. Haasch, N. Hellgren, N. Finnegan, L. Hultman, and M. Eriksson, "Characterization of the metal-insulator interface of field-effect chemical sensors, " J. Appl. Phys., vol. 93, pp. 9760-9768, Jun. 2003.
7. H. Wingbrant, I. Lundström, and A. L. Spetz, "The speed of response of MISiCFET devices, " Sens. Actuators B. Chem., vol. 93, pp. 286-294, 2003.
8. K. W. Lin, H. I. Chen, C. T. Lu, Y. Y. Tsai, H. M. Chuang, C. C. Chen, and W. C. Liu, "A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor, " Semicond. Sci. Technol, vol. 18, pp. 615-619, 2003.
9. K. W. Lin, H. I. Chen, H. M. Chuang, C. Y. Chen, C. T. Lu, C. C. Cheng, and W. C. Liu, "Characteristics of Pd/InGaP Schottky diodes hydrogen sensors, " IEEE Sensors J., vol. 4, no. 1, pp. 72-79, Feb. 2004.
10. L. M. Lechuga, A. Calle, D. Golmayo, P. Tejedor, and F. Briones, "A new hydrogen sensor based on a Pt/GaAs schottky diode, " Sens. Actuators B. Chem., vol. 4, pp. 515-518, 1991. (Pubitemid 21714469)
11. Y. K. Fang, S. B. Hwang, C. Y. Lin, and C. C. Lee, "Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor, " Appl. Phys. Lett., vol. 57, pp. 2686-2688, 1990.
12. W. P. Kang and Y. Gurbuz, "Comparison and analysis of Pd-and Pt-GaAs Schottky diodes for hydrogen detection, " J. Appl. Phys., vol. 75, pp. 8175-8181, 1994.
13. 0.7As MOS hydrogen sensor, " IEEE Electron Device Lett., vol. 24, no., pp. 390-392, Jun. 2003.
14. Y. Y. Tsai, K. W. Lin, C. T. Lu, H. I. Chen, H. M. Chuang, C. Y. Chen, C. C. Cheng, and W. C. Liu, "Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes, " IEEE Trans. Electron Devices, vol. 50, pp. 2532-2539, Dec. 2003.
15. I. Lundström, S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field-effect transistor, " Appl. Phys. Lett., vol. 26, pp. 55-57, 1975.
16. D. Dwivedi, R. Dwivedi, and S. K. Srivastava, "Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasma grown silicon dioxide, " Sens. ActuatorsB. Chem., vol. 71, pp. 161-168, 2000. (Pubitemid 32034385)
17. J. W. Hammond and C. C. Liu, "Silicon based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement, " Sens. Actuators B. Chem., vol. 81, pp. 25-31, 2001. (Pubitemid 33103622)
18. B. P. Luther, S. D. Wolter, and S. E. Mohney, "High temperature Pt Schottky diode gas sensors on n-type GaN, " Sens. Actuators B. Chem., vol. 56, pp. 164-168, 1999.
19. A. Arbab, A. Spetz, and I. Lunström, "Gas sensors for high-temperature operation-based on metal-oxide-silicon-carbide (MOSiC) devices, " Sens. Actuators B. Chem., vol. 15-16, pp. 19-23, 1993.
20. A. Baranzahi, A. L. Spetz, B. Andersson, and I. Lundström, "Gas sensitive field effect devices for high temperature, " Sens. Actuators B, Chem, vol. 26, pp. 165-169, 1995.
21. C. K. Kim, J. H. Lee, Y. H. Lee, N. I. Cho, D. J. Kim, and W. P. Kang, "Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high temperature, " J. Electron. Mat., vol. 28, pp. 202-205, 1999.
22. A. L. Spetz, P. Tobias, L. Unéus, H. Svenningstorp, L. G. Ekedahl, and I. Lundström, "High temperature catalytic metal field effect transistors for industrial applications, " Sens. Actuators B, Chem., vol. 70, pp. 67-76, 2000.
23. 4 at high temperature, " Sens. Actuators B, Chem., vol. 77, pp. 455-462, 2001. (Pubitemid 32546783)
24. 3 - ZnO/SiC Schottky diode-based hydrocarbon gas sensor, " IEEE Sensors J., vol. 3, no. 5, pp. 548-553, Oct. 2003.
25. J. Li, W. R. Donaldson, and T. Y. Hsiang, "Very fast metal-semiconductor-metal ultraviolet photodetectors on GaN with submicro finger width, " IEEE Photonics Technol. Lett., vol. 15, no. 8, pp. 1141-1143, Aug. 2003.
26. M. Mosca, J. L. Reverchon, N. Grandjean, and J. Y. Duboz, "Multilayer (Al, Ga) N structures for solar-blind detection, " IEEE J. Sel. Top. Quantum Electron., vol. 10, no. 4, pp. 752-758, Jul.-Aug. 2004.
27. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins, "High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates, " IEEE Electron Device Lett., vol. 20, no. 4, pp. 161-163, Apr. 1999.
28. R. Gaska, Q. Chen, J. Yang, A. Qsinsky, M. Asif Khan, and M. S. Shur, "High-temperature performance of AlGaN/GaN HFET's on SiC substrates, " IEEE Electron Device Lett., vol. 18, no. 10, pp. 492-494, Oct. 1997. (Pubitemid 127571482)
29. J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Görgens, and G. Dollinger, "Hydrogen response mechanism of Pt-GaN Schottky diodes, " Appl. Phys. Lett., vol. 80, pp. 1222-1224, 2002.
30. J. Kim, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton, "Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes, " Appl. Phys. Lett., vol. 82, pp. 739-741, 2003.
31. J. Kim, B. P. Gila, G. Y. Chung, C. R. Abernathy, S. J. Pearton, and F. Ren, "Hydrogen-sensitive GaN Schottky diodes, " Solid-State Electron., vol. 47, pp. 1069-1073, 2003.
32. I. Lundström and L. G. Petersson, "Chemical sensors with catalytic metal gates," J. Vac. Sci. TechnolA., vol. 14, pp. 1539-1545, 1996. (Pubitemid 126082072)
33. F. A. Lewis, The Palladium Hydrogen System. New York: Academic, 1967.
34. M. Z. Atashbar, D. Banerji, and S. Singamaneni, "Room-temperature hydrogen sensor based on palladium nanowires, " IEEE Sensors J., vol. 5, no. 5, pp. 792-797, Oct. 2005. (Pubitemid 41583914)
35. M. Johansson, I. Lundström, and L. G. Ekedahl, "Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments, " J. Appl. Phys., vol. 84, pp. 44-51, 1998. (Pubitemid 128559377)
36. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, ch. 2.
37. M. W. Cole, D. W. Eckart, W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. A. Stall, S. J. Pearton, Y. Li, and Y. Lu, "Thermal stability of W ohmic contacts to n-type GaN, " J. Appl. Phys., vol. 80, pp. 278-281, 1996. (Pubitemid 126578988)
38. 2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor, " J. Appl. Phys., vol. 83, pp. 3947-3951, 1998. (Pubitemid 128591086)
39. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, S. Y. Cheng, and K. H. Yu, "Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor, " IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1938-1944, Sep. 2001.
40. C. Christofides and A. Mandelis, "Solid-state sensors for trace hydrogen gas detection, " J. Appl. Phys., vol. 68, pp. R1-R30, 1990.
41. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, and C. K. Wang, "Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes, " Jpn. J. Appl. Phys., vol. 40, pp. 6254-6289, 2001.
42. R. J. Silbey and R. A. Alberty, Physical Chemistry, 3rd ed. New York: Wiley, 2001.
43. 2 interfaces, " J. Appl. Phys., vol. 82, pp. 3143-3146, Sep. 1997. (Pubitemid 127657662)