Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes

Current Applied Physics

Volumn 10, Issue 4, 2010, Pages 1029-1032

  Wang, Yu Lin ^a   Ren, F ^a   Lim, Wantae ^a   Pearton, S J ^a   Baik, Kwang Hyeon ^b   Hwang, Sung Min ^b   Gon Seo, Yong ^b   Jang, Soohwan ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

^c Dankook University   (South Korea)

Author keywords

a Plane; GaN; Hydrogen; Sensing

Indexed keywords

A-PLANE; A-PLANE GAN; BARRIER HEIGHTS; GAN LAYERS; HYDROGEN EXPOSURE; HYDROGEN-SENSING; NON-POLAR; OHMIC BEHAVIOR; RECOVERY TIME; REVERSE BIAS; ROOM TEMPERATURE; SCHOTTKY DIODES;

DIODES; DISTILLATION; GALLIUM NITRIDE; HYDROGEN; PALLADIUM; PLATINUM; SCHOTTKY BARRIER DIODES;

GALLIUM ALLOYS;

EID: 77951255530     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.034     Document Type: Article

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