SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 17, 2012, Pages 5790-5796

Effect of annealing temperature on ZnO:Al/p-Si heterojunctions

(3) Baydogan, N a Karacasu, O a Cimenoglu, H a

a ISTANBUL TECHNICAL UNIVERSITY (Turkey)

Author keywords

Aluminium; Annealing; Electrical properties; Heterojunctions; Sol gel deposition; Zinc oxide

Indexed keywords

AL-CONCENTRATION; ANNEALING TEMPERATURES; CURRENT FLOWS; DRYING PROCESS; ELECTRONIC DEVICE; IN-VACUUM; P-TYPE SILICON WAFERS; SOL-GEL DEPOSITION; SOL-GEL DIP COATING TECHNIQUE; ZNO; ZNO:AL FILMS;

ALUMINUM; ANNEALING; ELECTRIC PROPERTIES; HETEROJUNCTIONS; SILICON; SOL-GELS; ZINC OXIDE;

SILICON WAFERS;

EID: 84861831755 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.04.044 Document Type: Article

Times cited : (29)

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