Structural, morphological, and electrical characterization of heteroepitaxial ZnO thin films deposited on Si (100) by pulsed laser deposition: Effect of annealing (800°C) in air

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Jejurikar, S M ^a   Banpurkar, A G ^a   Limaye, A V ^a   Date, S K ^a   Patil, S I ^a   Adhi, K P ^a   Misra, P ^b   Kukreja, L M ^b   Bathe, Ravi ^c  

^a UNIVERSITY OF PUNE   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^c INTERNATIONAL ADVANCED RESEARCH CENTRE FOR POWDER METALLURGY AND NEW MATERIALS ARCI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROEPITAXIAL ZNO THIN FILMS; NONLINEAR PARAMETERS; NONLINEAR VARIATION; PREFERENTIAL C -AXIS ORIENTATION;

ANNEALING; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FILM GROWTH; MORPHOLOGY; PULSED LASER DEPOSITION; SUBSTRATES;

THIN FILMS;

EID: 30844460133     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2160713     Document Type: Article

References (16)

1. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B 22, 932 (2004).
2. Z. L. Wang, Mater. Today 7, 26 (2004).
3. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998).
4. D. M. Bagnall, Y. G. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
5. R. D. Vispute, Appl. Phys. Lett. 70, 2735 (1997).
6. S. H. Bae, S. Y. Lee, B. J. Jin, and S. Im, Appl. Surf. Sci. 154-155, 458 (2000).
7. Semiconducting Transparent Thin Films, edited by, H. L. Hartnagel, A. L. Dawar, A. K. Jain, and, C. Jagadish, (Institute of Physics, London, 1995), p. 116.
8. V. Ratnikov, R. Kyutt, T. Shubina, T. Paskova, E. Valcheva, and B. Monemar, J. Appl. Phys. 88, 6252 (2000).
9. T. K. Gupta, J. Am. Ceram. Soc. 73, 1817 (1990).
10. D. C. Look, J. W. Hemsky, and J. R. Sizelove, Phys. Rev. Lett. 82, 2552 (1999).
11. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
12. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).
13. C. G. Van de Walle and J. Neugebauer, Nature (London) 423, 626 (2003).
14. L. Wang, W. Wu, X.-G. Li, and Y. Zhang, J. Appl. Phys. 77, 5982 (1995).
15. S. Tanaka and K. Takahashi, J. Eur. Ceram. Soc. 19, 727 (1999).
16. Y. F. Lu, H. Q. Ni, Z. H. Mai, and Z. M. Ren, J. Appl. Phys. 88, 498 (2000).