High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 1036-1039

  Hoex, B ^a,b   Peeters, F J J ^a   Van Erven, A J M ^b   Bijker, M D ^b   Kessels, W M M ^a   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b OTB Solar   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANTIREFLECTION COATINGS; DEPOSITION RATES; PASSIVATION; SILICON NITRIDE;

CRYSTALLINE SILICON SOLAR CELLS; EXPANDING THERMAL PLASMA (ETP); OPTICAL QUALITY THIN FILMS; THERMAL PLASMA TECHNIQUE;

SILICON SOLAR CELLS;

EID: 41749095884     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279296     Document Type: Conference Paper

References (16)

1. Dauwe, S., L. Mittelstadt, A. Metz, and R. Hezel, "Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells", Progress in Photovoltaics, 10, 2002, pp. 271.
2. Dauwe, S., J. Schmidt, and R. Hezel. "Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films". 29th IEEE Photovoltaic Specialist Conference. 2002. New Orleans, 1246.
3. Martin, I., M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas, and R. Alcubilla, "Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx : H films", Applied Physics Letters, 79, 2001, pp. 2199.
4. Bosch, R.C.M., W.T.M. Stals, A.J.M. Van Erven, R.L.J.R. Pennings, and M.D. Bijker. "High-Throughput PECVD Production Tool for In-Line Silicon-Nitride Deposition on Silicon Solar Cells". 19th European Photovoltaic Solar Energy Conference. 2004. Paris, 1098.
5. Kessels, W.M.M., J. Hong, F.J.H. van Assche, J.D. Moschner, T. Lauinger, W.J. Soppe, A.W. Weeber, D.C. Schräm, and M.C.M. van de Sanden, "High-rate deposition of a-SiNx : H for photovoltaic applications by the expanding thermal plasma", Journal of Vacuum Science & Technology A 20, 2002, pp. 1704.
6. Sinton, R.A. and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data", Applied Physics Letters, 69, 1996, pp. 2510.
7. Hong, J., W.M.M. Kessels, W.J. Soppe, A.W. Weeber, W.M. Amoldbik, and M.C.M. van de Sanden, "Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells", Journal of Vacuum Science & Technology B, 21, 2003, pp. 2123.
8. Hoex, B., A.J.M. van Erven, R.C.M. Bosch, W.T.M. Stals, M.D. Bijker, P.J. van den Oever, W.M.M. Kessels, and M.C.M. van de Sanden, "Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions", Progress in Photovoltaics, 13, 2005, pp. 705.
9. Moschner, J.D., J. Henze, J. Schmidt, and R. Hezel, "High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system", Progress in Photovoltaics, 12, 2004, pp. 21-31.
10. Ebong, A., P. Doshi, S. Narasimha, A. Rohatgi, J. Wang, and M.A. El-Sayed, "The effect of low and high temperature anneals on the hydrogen content and passivation of Si surface coated with SiO2 and SiN films", Journal of the Electrochemical Society, 146, 1999, pp. 1921.
11. Leguijt, C., P. Lolgen, J.A. Eikelboom, A.W. Weeber, F.M. Schuurmans, W.C. Sinke, P.F.A. Alkemade, P.M. Sarro, C.H.M. Maree, and L.A. Verhoef, "Low temperature surface passivation for silicon solar cells", Solar Energy Materials and Solar Cells, 40, 1996, pp. 297.
12. Hoex, B., F.J.J. Peeters, M. Creatore, M.D. Bijker, W.M.M. Kessels, and M.C.M. van de Sanden. "Excellent surface passivation of c-Si by high rate plasma deposited silicon oxide", this conference. 2006,
13. Sivoththaman, S., P. De Schepper, W. Laureys, J.F. Nijs, and R.P. Mertens, "Improving low-temperature APCVD SiO2 passivation by rapid thermal annealing for Si devices", IEEE Electron Device Letters, 19, 1998, pp. 505.
14. Kessels, W.M.M., R.J. Severens, A.H.M. Smets, B.A. Korevaar, G.J. Adriaenssens, D.C Schram, and M.C.M. van de Sanden, "Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma", Journal of Applied Physics, 89, 2001, pp. 2404.
15. Schaper, M., J. Schmidt, H. Plagwitz, and R. Brendel, "20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation", Progress in Photovoltaics, 13, 2005, pp.381.
16. Taguchi, M., K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, and O. Oota, "HIT (TM) cells - High-efficiency crystalline Si cells with novel structure", Progress in Photovoltaics, 8, 2000, pp. 503.