CoFeB/MgO based perpendicular magnetic tunnel junctions with stepped structure for symmetrizing different retention times of "0" and "1" information

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 214-215

  Miura, K ^a,b   Ikeda, S ^a   Yamanouchi, M ^a   Yamamoto, H ^b   Mizunuma, K ^a   Gan, H D ^a   Hayakawa, J ^b   Koizumi, R ^a   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIPOLE INTERACTION; ENERGY DIFFERENCES; FERROMAGNETIC LAYERS; INTERLAYER COUPLING; MAGNETIC TUNNEL JUNCTION; RANDOM ACCESS MEMORIES; REFERENCE LAYER; RETENTION TIME; SPIN TRANSFER TORQUE; TWO-STATE;

RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 80052679970     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. R. Takemura et al., VLSI Circ. Dig. pp.84-85 (2009).
2. H. Kimura et al., The 2004 International Conference on Circuits/Systems, Computers and Communications.
3. S. Matsunaga et al., Appl. Phys. Express 1, 091301 (2008).
4. S. Ikeda et al., Nature Mater. 9, 721 (2010).