Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur co-implantation and segregation

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 708-710

  Ang, Kah Wee ^a   Yu, Ming Bin ^a   Zhu, Shi Yang ^a   Chua, Khai Tze ^a   Lo, Guo Qiang ^a   Kwong, Dim Lee ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Ge On silicon on insulator (Ge on SOI); Metal semiconductor metal (MSM) photodetectors; Schottky barrier; Sulfur segregation

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; GERMANIUM; MARKOV PROCESSES; METALS; MODULATION; NICKEL COMPOUNDS; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SULFUR;

CO-IMPLANTATION; CONDUCTION BAND EDGE (CBE); GERMANIDE; HIGH SPEEDS; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; MSM PHOTODETECTORS; ORDERS-OF-MAGNITUDE; PHOTO DETECTION; SCHOTTKY BARRIER (SB); SCHOTTKY-BARRIER HEIGHT (SBH); SEGREGATION (BENEFICIATION);

PHOTODETECTORS;

EID: 47349083659     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923541     Document Type: Article

References (8)

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