Poly-Si thin film transistors with a source overlap and a drain offset: leakage current characteristics

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 148-151

  Jang, H K ^a   Lee, C E ^a   Noh, S J ^b  

^a Korea University   (South Korea)

^b Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE;

LIGHTLY DOPED OFFSET STRUCTURE; SOURCE OVERLAP STRUCTURE;

THIN FILM TRANSISTORS;

EID: 0032674371     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01555-7     Document Type: Article

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