High-performance amorphous Indium-Gallium-Zinc-Oxide Thin-Film transistor with a self-aligned etch stopper patterned by back-side UV exposure

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 758-760

  Geng, Di ^a   Kang, Dong Han ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Amorphous indiumgalliumzincoxide (a IGZO); back side exposure; ring oscillator (RO); self aligned process; thin film transistor (TFT)

Indexed keywords

AMORPHOUS INDIUMGALLIUMZINCOXIDE (A-IGZO); BACK-SIDE EXPOSURE; RING OSCILLATOR; SELF ALIGNED PROCESS; THIN-FILM TRANSISTOR (TFT);

AMORPHOUS FILMS; GALLIUM; INDIUM; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ORGANIC COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 79957603203     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2122330     Document Type: Article

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