Turn-off current variation in drain-offset polysilicon thin film transistors

Thin Solid Films

Volumn 461, Issue 2, 2004, Pages 336-339

  Lee, In Chan ^a   Ma, Tae Young ^a  

^a Gyeongsang National University   (South Korea)

Author keywords

Air exposure; Carbon; Drain offset poly Si TFT; Poly Si SiO2 interface

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; GATES (TRANSISTOR); POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

AIR EXPOSURE; DRAIN OFFSET POLYSI TFT; GATE OXIDES; POLY-SI/SIO2 INTERFACE;

THIN FILM TRANSISTORS;

EID: 2942652624     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.031     Document Type: Article

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