High-performance drain-offset a-IGZO thin-film transistors

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 644-646

  Mativenga, Mallory ^a   Choi, Min Hyuk ^a   Kang, Dong Han ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); kickback voltage

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

ACTIVE MATRIX DISPLAYS; AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); FIELD-EFFECT MOBILITIES; HIGH MOBILITY; LENGTH VARIATIONS; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 85027925443     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2119290     Document Type: Article

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