Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 3, 2012, Pages

  Maehashi, Kenzo ^a   Kishimoto, Takaomi ^a   Ohno, Yasuhide ^a   Inoue, Koichi ^a   Matsumoto, Kazuhiko ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; LOGIC DEVICES; NANOSENSORS; PASSIVATION;

AIR-STABLE; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CATALYTIC CHEMICAL VAPOR DEPOSITION; HIGH GAIN; INPUT VOLTAGES; NOISE MARGINS; PASSIVATION FILM; SUPPLY VOLTAGES; VOLTAGE INVERTER;

SILICON NITRIDE;

EID: 84861696522     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3697527     Document Type: Article

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