Electrical characterization of carbon nanotube field-effect transistors with SiNx passivation films deposited by catalytic chemical vapor deposition

Applied Physics Letters

Volumn 92, Issue 18, 2008, Pages

  Maehashi, Kenzo ^a   Ohno, Yasuhide ^a   Inoue, Koichi ^a   Matsumoto, Kazuhiko ^a   Niki, Toshikazu ^b   Matsumura, Hideki ^c  

^a OSAKA UNIVERSITY   (Japan)

^b Ishikawa Seisakusho Ltd   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; PASSIVATION; SILICON NITRIDE; SUBSTRATES;

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNTFET); DEPOSITION TEMPERATURE; PASSIVATION FILMS;

FIELD EFFECT TRANSISTORS;

EID: 43349088047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2920206     Document Type: Article

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